File:Silicon_doping_-_Type_N.svg
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![File:Silicon doping - Type N.svg](http://upload.wikimedia.org/wikipedia/commons/thumb/a/a3/Silicon_doping_-_Type_N.svg/326px-Silicon_doping_-_Type_N.svg.png)
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Summary
DescriptionSilicon doping - Type N.svg |
العربية: تشويب السيلكون بذرات عنصر خماسي التكافؤ من أجل تشكيل شبه موصل مشوب من النوع إن.
English: Silicon doping to create extrinsic semiconductor type N. |
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Date | ||||||||||||||||||
Source | Robert Boylestad, Louis Nashelsky (1998).Electronic Devices and Circuit Theory (PDF) (7th Edition). Prentice Hall. P.8. ISBN 013769282X. | |||||||||||||||||
Author |
creator QS:P170,Q81411358 |
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24 November 2018
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 14:37, 6 April 2019 | ![]() | 326 × 288 (200 KB) | Michel Bakni | Fix font type |
07:19, 24 November 2018 | ![]() | 326 × 288 (53 KB) | Michel Bakni | User created page with UploadWizard |
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Width | 326.39999 |
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Height | 288 |
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