Gallium(III) oxide
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Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga2O3. It is actively studied for applications in power electronics, phosphors, and gas sensing.[5][6][7] The compound has several polymorphs, of which the monoclinic β-phase is the most stable. The β-phase’s bandgap of 4.7–4.9 eV and large-area, native substrates make it a promising competitor to GaN and SiC-based power electronics applications and solar-blind UV photodetectors.[7][8] The orthorhombic ĸ-Ga2O3 is the second most stable polymorph. The ĸ-phase has shown instability of subsurface doping density under thermal exposure.[9] Ga2O3 exhibits reduced thermal conductivity and electron mobility by an order of magnitude compared to GaN and SiC, but is predicted to be significantly more cost-effective due to being the only wide-bandgap material capable of being grown from melt.[7][10][11] β-Ga2O3 is thought to be radiation-hard, which makes it promising for military and space applications.[12][13]
β-Ga2O3 crystal | |
Crystal structure of β-Ga2O3 | |
Names | |
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Other names
gallium trioxide, gallium sesquioxide | |
Identifiers | |
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ECHA InfoCard | 100.031.525 |
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Properties | |
Ga2O3 | |
Molar mass | 187.444 g/mol |
Appearance | white crystalline powder |
Melting point | 1,725 °C (3,137 °F; 1,998 K)[1] |
insoluble | |
Solubility | soluble in most acids |
Structure[2][3] | |
Monoclinic, mS20, space group = C2/m, No. 12 | |
a = 1.2232 nm, b = 0.3041 nm, c = 0.5801 nm α = 90°, β = 103.73°, γ = 90° β-phase | |
Formula units (Z) |
4 |
Thermochemistry[4] | |
Heat capacity (C) |
92.1 J/(mol·K) |
Std molar entropy (S⦵298) |
85.0 J/(mol·K) |
Std enthalpy of formation (ΔfH⦵298) |
−1089.1 kJ/mol |
Gibbs free energy (ΔfG⦵) |
−998.3 kJ/mol |
Enthalpy of fusion (ΔfH⦵fus) |
100 kJ/mol |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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