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1 μm process

Semiconductor manufacturing process From Wikipedia, the free encyclopedia

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The 1 μm process (1 micrometer process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,[1][2] by companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).

The 1 μm process refers to the minimum size that could be reliably produced. The smallest transistors and other circuit elements on a chip made with this process were around 1 micrometers wide.

The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.[3]

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Products featuring 1.0 μm manufacturing process

  • NTT introduced the 1 μm process for its DRAM memory chips, including its 64k in 1979 and 256k in 1980.[4]
  • NEC's 1 Mbit DRAM memory chip was manufactured with the 1 μm process in 1984.[5]
  • Intel 80386 CPU launched in 1985 was manufactured using this process.[1]
  • Intel uses this process on the CHMOS III-E technology.[6]
  • Intel uses this process on the CHMOS IV technology.[7]

References

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