pMOSFET

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p +‎ MOSFET, where n denotes "positive" or "p-type".

pMOSFET (plural pMOSFETs)

(electronics, semiconductors) A type of metal–oxide–semiconductor field-effect transistor (MOSFET) that utilizes an p-type channel, conducting when a voltage voltage below a threshold is applied to the gate relative to the source. It is commonly used in complementary metal–oxide–semiconductor (CMOS) technology alongside nMOSFETs.
- 1990 March, Katsushi Asahina, Shuji Murakami, Katsuki Ichinose, Fuyumi Minami, Yasuhiro Funakoshi, “A 256-K 13-Nanosecond CMOS SRAM”, in Electronics & Communications in Japan, Part 2: Electronics, volume 73, number 3, pages 44-45:
  As shown in Fig. 2, the source-drain breakdown characteristics of PMOSFETS exhibit an increase in the drain current under the same drain voltage as the gate length increases.
- 2025 April, A. Tahiat, B. Cretu, A. Veloso, E. Simoen, “Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K”, in Solid-State Electronics‎, volume 225, page 1:
  In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics.