Ballistic collection transistor

The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot.^[1] Initial demonstration of ballistic conduction in gallium arsenide was done in 1985 by IBM researchers.^[2] The amplifier with 40 GHz bandwidth based on heterojunction bipolar transistor gallium arsenide technology implementing ballistic collection transistors was developed in 1994 by Nippon Telegraph and Telephone researchers.^[3]

See also

• Ballistic deflection transistor