Indium gallium aluminium nitride

Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth methods such as metalorganic chemical vapour deposition (MOCVD).^[1][2] This material is used for specialist opto-electronics applications, including laser diodes and LEDs with wavelengths from the UV to green regions of the optical spectrum.^[1]

See also

• Indium aluminium nitride