Rzhanov Institute of Semiconductor Physics

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS (Russian: Институт физики полупроводников имени А. В. Ржанова СО РАН) is a research institute in Akademgorodok of Novosibirsk, Russia. It was founded in 1964.

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

Founder	Anatoly Rzhanov
Established	1964
Director	Alexander Latyshev
Owner	Siberian Branch of the Russian Academy of Sciences
Address	Lavrentyev Prospekt 13, Novosibirsk, 630090, Russia
Location	Novosibirsk , Russia
Website	www.isp.nsc.ru

History

The institute was created in 1964 by merging the Institute of Solid State Physics and Semiconductor Electronics and the Institute of Radiophysics and Electronics.^[1] In the 1970s, the institute began to work on developing molecular-beam epitaxy methods.^[1]

Scientific activity

Development of the physical fundamentals of microelectronics, acousto-electronics, microphotoelectronics, quantum electronics; the study of physical phenomena in semiconductor thin-film structures etc.^[2]