Scandium nitride

Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation.^[1] It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV.^[1][2] These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods.^[2][3] Scandium nitride is also an effective gate for semiconductors on a silicon dioxide (SiO₂) or hafnium dioxide (HfO₂) substrate.^[4]

Scandium nitride

Names
IUPAC name Scandium nitride
Other names Azanylidynescandium Nitridoscandium
Identifiers
CAS Number	25764-12-9
3D model (JSmol)	Interactive image
ChemSpider	105117
ECHA InfoCard	100.042.938
EC Number	247-247-2
PubChem CID	117629
CompTox Dashboard (EPA)	DTXSID9067142
InChI InChI=1S/N.Sc Key: CUOITRGULIVMPC-UHFFFAOYSA-N
SMILES N#[Sc]
Properties
Chemical formula	ScN
Molar mass	58.963
Density	4.4 g/cm3
Melting point	2,600 °C (4,710 °F; 2,870 K)
Hazards
GHS labelling:
Pictograms
Signal word	Danger
Hazard statements	H228
Related compounds
Other anions	Scandium phosphide Scandium arsenide Scandium antimonide Scandium bismuthide
Other cations	Yttrium nitride Lutetium nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references