Trimethylsilane

Trimethylsilane is the organosilicon compound with the formula (CH₃)₃SiH. It is a trialkylsilane. The Si-H bond is reactive. Being a gas, it is less commonly used as a reagent than the related triethylsilane, which is a liquid at room temperature.

Trimethylsilane

Names
Preferred IUPAC name Trimethylsilane
Identifiers
CAS Number	993-07-7 Y
3D model (JSmol)	Interactive image
ChemSpider	63614
ECHA InfoCard	100.012.366
EC Number	213-603-0
PubChem CID	70435
UNII	9L70DJH2K0 Y
CompTox Dashboard (EPA)	DTXSID60870822
SMILES C[SiH](C)C
Properties
Chemical formula	C3H10Si
Molar mass	74.198 g·mol−1
Density	0.638 g cm−3
Melting point	−135.9 °C (−212.6 °F; 137.2 K)
Boiling point	6.7 °C (44.1 °F; 279.8 K)
Hazards
GHS labelling:
Pictograms
Signal word	Danger
Hazard statements	H220, H224, H315, H319, H335
Precautionary statements	P210, P233, P240, P241, P242, P243, P261, P264, P271, P280, P302+P352, P303+P361+P353, P304+P340, P305+P351+P338, P312, P321, P332+P313, P337+P313, P362, P370+P378, P377, P381, P403, P403+P233, P403+P235, P405, P410+P403, P501
NFPA 704 (fire diamond)	2 4 1
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references

Trimethylsilane is used in the semiconductor industry as precursor to deposit dielectrics and barrier layers via plasma-enhanced chemical vapor deposition (PE-CVD).^[1] It is also used a source gas to deposit TiSiCN hard coatings via plasma-enhanced magnetron sputtering (PEMS). It has also been used to deposit silicon carbide hard coatings via low-pressure chemical vapor deposition (LP-CVD) at relatively low temperatures under 1000 °C. It is an expensive gas but safer to use than silane (SiH₄); and produces properties in the coatings that cannot be undertaken by multiple source gases containing silicon and carbon.

See also

• Dimethylsilane
• Trimethylsilyl functional group