List of semiconductor scale examples

Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes.

Timeline of MOSFET demonstrations

See also: MOSFET, Semiconductor device fabrication, and Transistor density

PMOS and NMOS

MOSFET (PMOS and NMOS) demonstrations

Date	Channel length	Oxide thickness[1]	MOSFET logic	Researcher(s)	Organization	Ref
June 1960	20,000 nm	100 nm	PMOS	Mohamed M. Atalla, Dawon Kahng	Bell Telephone Laboratories	[2][3]
			NMOS
	10,000 nm	100 nm	PMOS	Mohamed M. Atalla, Dawon Kahng	Bell Telephone Laboratories	[4]
			NMOS
May 1965	8,000 nm	150 nm	NMOS	Chih-Tang Sah, Otto Leistiko, A.S. Grove	Fairchild Semiconductor	[5]
	5,000 nm	170 nm	PMOS
December 1972	1,000 nm	?	PMOS	Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu	IBM T.J. Watson Research Center	[6][7][8]
1973	7,500 nm	?	NMOS	Sohichi Suzuki	NEC	[9][10]
	6,000 nm	?	PMOS	?	Toshiba	[11][12]
October 1974	1,000 nm	35 nm	NMOS	Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu	IBM T.J. Watson Research Center	[13]
	500 nm
September 1975	1,500 nm	20 nm	NMOS	Ryoichi Hori, Hiroo Masuda, Osamu Minato	Hitachi	[7][14]
March 1976	3,000 nm	?	NMOS	?	Intel	[15]
April 1979	1,000 nm	25 nm	NMOS	William R. Hunter, L. M. Ephrath, Alice Cramer	IBM T.J. Watson Research Center	[16]
December 1984	100 nm	5 nm	NMOS	Toshio Kobayashi, Seiji Horiguchi, K. Kiuchi	Nippon Telegraph and Telephone	[17]
December 1985	150 nm	2.5 nm	NMOS	Toshio Kobayashi, Seiji Horiguchi, M. Miyake, M. Oda	Nippon Telegraph and Telephone	[18]
	75 nm	?	NMOS	Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis	MIT	[19]
January 1986	60 nm	?	NMOS	Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis	MIT	[20]
June 1987	200 nm	3.5 nm	PMOS	Toshio Kobayashi, M. Miyake, K. Deguchi	Nippon Telegraph and Telephone	[21]
December 1993	40 nm	?	NMOS	Mizuki Ono, Masanobu Saito, Takashi Yoshitomi	Toshiba	[22]
September 1996	16 nm	?	PMOS	Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba	NEC	[23]
June 1998	50 nm	1.3 nm	NMOS	Khaled Z. Ahmed, Effiong E. Ibok, Miryeong Song	Advanced Micro Devices (AMD)	[24][25]
December 2002	6 nm	?	PMOS	Bruce Doris, Omer Dokumaci, Meikei Ieong	IBM	[26][27][28]
December 2003	3 nm	?	PMOS	Hitoshi Wakabayashi, Shigeharu Yamagami	NEC	[29][27]
		?	NMOS

CMOS (single-gate)

Complementary MOSFET (CMOS) demonstrations (single-gate)

Date	Channel length	Oxide thickness[1]	Researcher(s)	Organization	Ref
February 1963	?	?	Chih-Tang Sah, Frank Wanlass	Fairchild Semiconductor	[30][31]
1968	20,000 nm	100 nm	?	RCA Laboratories	[32]
1970	10,000 nm	100 nm	?	RCA Laboratories	[32]
December 1976	2,000 nm	?	A. Aitken, R.G. Poulsen, A.T.P. MacArthur, J.J. White	Mitel Semiconductor	[33]
February 1978	3,000 nm	?	Toshiaki Masuhara, Osamu Minato, Toshio Sasaki, Yoshio Sakai	Hitachi Central Research Laboratory	[34][35][36]
February 1983	1,200 nm	25 nm	R.J.C. Chwang, M. Choi, D. Creek, S. Stern, P.H. Pelley	Intel	[37][38]
	900 nm	15 nm	Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima	Nippon Telegraph and Telephone (NTT)	[37][39]
December 1983	1,000 nm	22.5 nm	G.J. Hu, Yuan Taur, Robert H. Dennard, Chung-Yu Ting	IBM T.J. Watson Research Center	[40]
February 1987	800 nm	17 nm	T. Sumi, Tsuneo Taniguchi, Mikio Kishimoto, Hiroshige Hirano	Matsushita	[37][41]
	700 nm	12 nm	Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima	Nippon Telegraph and Telephone (NTT)	[37][42]
September 1987	500 nm	12.5 nm	Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. Haddad	IBM T.J. Watson Research Center	[43]
December 1987	250 nm	?	Naoki Kasai, Nobuhiro Endo, Hiroshi Kitajima	NEC	[44]
February 1988	400 nm	10 nm	M. Inoue, H. Kotani, T. Yamada, Hiroyuki Yamauchi	Matsushita	[37][45]
December 1990	100 nm	?	Ghavam G. Shahidi, Bijan Davari, Yuan Taur, James D. Warnock	IBM T.J. Watson Research Center	[46]
1993	350 nm	?	?	Sony	[47]
1996	150 nm	?	?	Mitsubishi Electric
1998	180 nm	?	?	TSMC	[48]
December 2003	5 nm	?	Hitoshi Wakabayashi, Shigeharu Yamagami, Nobuyuki Ikezawa	NEC	[29][49]

Multi-gate MOSFET (MuGFET)

Multi-gate MOSFET (MuGFET) demonstrations

Date	Channel length	MuGFET type	Researcher(s)	Organization	Ref
August 1984	?	DGMOS	Toshihiro Sekigawa, Yutaka Hayashi	Electrotechnical Laboratory (ETL)	[50]
1987	2,000 nm	DGMOS	Toshihiro Sekigawa	Electrotechnical Laboratory (ETL)	[51]
December 1988	250 nm	DGMOS	Bijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. Oh	IBM T.J. Watson Research Center	[52][53]
	180 nm
	?	GAAFET	Fujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. Okabe	Toshiba	[54][55][56]
December 1989	200 nm	FinFET	Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda	Hitachi Central Research Laboratory	[57][58][59]
December 1998	17 nm	FinFET	Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor	University of California (Berkeley)	[60][61]
2001	15 nm	FinFET	Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu	University of California (Berkeley)	[60][62]
December 2002	10 nm	FinFET	Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor	University of California (Berkeley)	[60][63]
June 2006	3 nm	GAAFET	Hyunjin Lee, Yang-kyu Choi, Lee-Eun Yu, Seong-Wan Ryu	KAIST	[64][65]

Other types of MOSFET

MOSFET demonstrations (other types)

Date	Channel length (nm)	Oxide thickness (nm)[1]	MOSFET type	Researcher(s)	Organization	Ref
October 1962	?	?	TFT	Paul K. Weimer	RCA Laboratories	[66][67]
1965	?	?	GaAs	H. Becke, R. Hall, J. White	RCA Laboratories	[68]
October 1966	100,000	100	TFT	T.P. Brody, H.E. Kunig	Westinghouse Electric	[69][70]
August 1967	?	?	FGMOS	Dawon Kahng, Simon Min Sze	Bell Telephone Laboratories	[71]
October 1967	?	?	MNOS	H.A. Richard Wegener, A.J. Lincoln, H.C. Pao	Sperry Corporation	[72]
July 1968	?	?	BiMOS	Hung-Chang Lin, Ramachandra R. Iyer	Westinghouse Electric	[73][74]
October 1968	?	?	BiCMOS	Hung-Chang Lin, Ramachandra R. Iyer, C.T. Ho	Westinghouse Electric	[75][74]
1969	?	?	VMOS	?	Hitachi	[76][77]
September 1969	?	?	DMOS	Y. Tarui, Y. Hayashi, Toshihiro Sekigawa	Electrotechnical Laboratory (ETL)	[78][79]
October 1970	?	?	ISFET	Piet Bergveld	University of Twente	[80][81]
October 1970	1000	?	DMOS	Y. Tarui, Y. Hayashi, Toshihiro Sekigawa	Electrotechnical Laboratory (ETL)	[82]
1977	?	?	VDMOS	John Louis Moll	HP Labs	[76]
	?	?	LDMOS	?	Hitachi	[83]
July 1979	?	?	IGBT	Bantval Jayant Baliga, Margaret Lazeri	General Electric	[84]
December 1984	2000	?	BiCMOS	H. Higuchi, Goro Kitsukawa, Takahide Ikeda, Y. Nishio	Hitachi	[85]
May 1985	300	?	?	K. Deguchi, Kazuhiko Komatsu, M. Miyake, H. Namatsu	Nippon Telegraph and Telephone	[86]
February 1985	1000	?	BiCMOS	H. Momose, Hideki Shibata, S. Saitoh, Jun-ichi Miyamoto	Toshiba	[87]
November 1986	90	8.3	?	Han-Sheng Lee, L.C. Puzio	General Motors	[88]
December 1986	60	?	?	Ghavam G. Shahidi, Dimitri A. Antoniadis, Henry I. Smith	MIT	[89][20]
May 1987	?	10	?	Bijan Davari, Chung-Yu Ting, Kie Y. Ahn, S. Basavaiah	IBM T.J. Watson Research Center	[90]
December 1987	800	?	BiCMOS	Robert H. Havemann, R. E. Eklund, Hiep V. Tran	Texas Instruments	[91]
June 1997	30	?	EJ-MOSFET	Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba	NEC	[92]
1998	32	?	?	?	NEC	[27]
1999	8	?	?	?
April 2000	8	?	EJ-MOSFET	Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba	NEC	[93]

Commercial products using micro-scale MOSFETs

Products featuring 20 μm manufacturing process

• RCA's CD4000 series of integrated circuits (ICs) beginning in 1968.^[32]

Products featuring 10 μm manufacturing process

Main article: 10 μm process

• Intel 4004, the first single-chip microprocessor CPU, launched in 1971.
• Intel 8008 CPU launched in 1972.

Products featuring 8 μm manufacturing process

• Intel 1103, an early dynamic random-access memory (DRAM) chip launched in 1970.^[94]
• MOS Technology 6502 1 MHz CPU launched in 1975.^[95]

Products featuring 6 μm manufacturing process

Main article: 6 μm process

• Toshiba TLCS-12, a microprocessor developed for the Ford EEC (Electronic Engine Control) system in 1973.^[11]
• Intel 8080 CPU launched in 1974 was manufactured using this process.^[96]
• The Television Interface Adaptor, the custom graphics and audio chip developed for the Atari 2600 in 1977.^[97]
• MOS Technology SID, a programmable sound generator developed for the Commodore 64 in 1982.^[97]
• MOS Technology VIC-II, a video display controller developed for the Commodore 64 in 1982 (5 μm).^[97]

Products featuring 3 μm manufacturing process

Main article: 3 μm process

• Intel 8085 CPU launched in 1976.^[98]
• Intel 8086 CPU launched in 1978.^[96]
• Intel 8088 CPU launched in 1979.
• Motorola 68000 8 MHz CPU launched in 1979 (3.5 μm).

Products featuring 1.5 μm manufacturing process

Main article: 1.5 μm process

• NEC's 64 kb SRAM memory chip in 1981.^[47]
• Intel 80286 CPU launched in 1982.
• The Amiga Advanced Graphics Architecture (initially sold in 1992) included chips such as Alice that were manufactured using a 1.5 μm CMOS process.^[99]

Products featuring 1 μm manufacturing process

Main article: 1 μm process

• NTT's DRAM memory chips, including its 64 kb chip in 1979 and 256 kb chip in 1980.^[37]
• NEC's 1 Mb DRAM memory chip in 1984.^[47]
• Intel 80386 CPU launched in 1985.

Products featuring 800 nm manufacturing process

Main article: 800 nm process

• NTT's 1 Mb DRAM memory chip in 1984.^[37]
• NEC and Toshiba used this process for their 4 Mb DRAM memory chips in 1986.^[47]
• Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4 Mb DRAM memory chips in 1987.^[37]
• Toshiba's 4 Mb EPROM memory chip in 1987.^[47]
• Hitachi, Mitsubishi and Toshiba used this process for their 1 Mb SRAM memory chips in 1987.^[47]
• Intel 486 CPU launched in 1989.
• microSPARC I launched in 1992.
• First Intel P5 Pentium CPUs at 60 MHz and 66 MHz launched in 1993.

Products featuring 600 nm manufacturing process

Main article: 600 nm process

• Mitsubishi Electric, Toshiba and NEC introduced 16 Mb DRAM memory chips manufactured with a 600 nm process in 1989.^[47]
• NEC's 16 Mb EPROM memory chip in 1990.^[47]
• Mitsubishi's 16 Mb flash memory chip in 1991.^[47]
• Intel 80486DX4 CPU launched in 1994.
• IBM/Motorola PowerPC 601, the first PowerPC chip, was produced in 0.6 μm.
• Intel Pentium CPUs at 75 MHz, 90 MHz and 100 MHz.

Products featuring 350 nm manufacturing process

Main article: 350 nm process

• Sony's 16 Mb SRAM memory chip in 1994.^[47]
• NEC VR4300 (1995), used in the Nintendo 64 game console.
• Intel Pentium Pro (1995), Pentium (P54CS, 1995), and initial Pentium II CPUs (Klamath, 1997).
• AMD K5 (1996) and original AMD K6 (Model 6, 1997) CPUs.
• Parallax Propeller, 8 core microcontroller.^[100]

Products featuring 250 nm manufacturing process

Main article: 250 nm process

• Hitachi's 16 Mb SRAM memory chip in 1993.^[47]
• Hitachi and NEC introduced 256 Mb DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994.^[47]
• NEC's 1 Gb DRAM memory chip in 1995.^[47]
• Hitachi's 128 Mb NAND flash memory chip in 1996.^[47]
• DEC Alpha 21264A, which was made commercially available in 1999.
• AMD K6-2 Chomper and Chomper Extended. Chomper was released on May 28, 1998.
• AMD K6-III "Sharptooth" used 250 nm.
• Mobile Pentium MMX Tillamook, released in August 1997.
• Pentium II Deschutes.
• Dreamcast console's Hitachi SH-4 CPU and PowerVR2 GPU, released in 1998.
• Pentium III Katmai.
• Initial PlayStation 2's Emotion Engine CPU.

Processors using 180 nm manufacturing technology

Main article: 180 nm process

• Intel Coppermine E- October 1999
• Sony PlayStation 2 console's Emotion Engine and Graphics Synthesizer – March 2000^[101]
• ATI Radeon R100 and RV100 Radeon 7000 – 2000
• AMD Athlon Thunderbird – June 2000
• Intel Celeron (Willamette) – May 2002
• Motorola PowerPC 7445 and 7455 (Apollo 6) – January 2002

Processors using 130 nm manufacturing technology

Main article: 130 nm process

• Fujitsu SPARC64 V – 2001^[102]
• Gekko by IBM and Nintendo (GameCube console) – 2001
• Motorola PowerPC 7447 and 7457 – 2002
• IBM PowerPC G5 970 – October 2002 – June 2003
• Intel Pentium III Tualatin and Coppermine – 2001-04
• Intel Celeron Tualatin-256 – 2001-10-02
• Intel Pentium M Banias – 2003-03-12
• Intel Pentium 4 Northwood- 2002-01-07
• Intel Celeron Northwood-128 – 2002-09-18
• Intel Xeon Prestonia and Gallatin – 2002-02-25
• VIA C3 – 2001
• AMD Athlon XP Thoroughbred, Thorton, and Barton
• AMD Athlon MP Thoroughbred – 2002-08-27
• AMD Athlon XP-M Thoroughbred, Barton, and Dublin
• AMD Duron Applebred – 2003-08-21
• AMD K7 Sempron Thoroughbred-B, Thorton, and Barton – 2004-07-28
• AMD K8 Sempron Paris – 2004-07-28
• AMD Athlon 64 Clawhammer and Newcastle – 2003-09-23
• AMD Opteron Sledgehammer – 2003-06-30
• Elbrus 2000 1891ВМ4Я (1891VM4YA) – 2008-04-27
• MCST-R500S 1891BM3 – 2008-07-27
• Vortex 86SX –

Commercial products using nano-scale MOSFETs

See also: Nanoelectronics and Nanocircuitry

Chips using 90 nm manufacturing technology

Main article: 90 nm process

• Sony–Toshiba Emotion Engine+Graphics Synthesizer (PlayStation 2) – 2003^[101]
• IBM PowerPC G5 970FX – 2004
• Elpida Memory's 90 nm DDR2 SDRAM process – 2005
• IBM PowerPC G5 970MP – 2005
• IBM PowerPC G5 970GX – 2005
• IBM Waternoose Xbox 360 Processor – 2005
• IBM–Sony–Toshiba Cell processor – 2005
• Intel Pentium 4 Prescott – 2004-02
• Intel Celeron D Prescott-256 – 2004-05
• Intel Pentium M Dothan – 2004-05
• Intel Celeron M Dothan-1024 – 2004-08
• Intel Xeon Nocona, Irwindale, Cranford, Potomac, Paxville – 2004-06
• Intel Pentium D Smithfield – 2005-05
• AMD Athlon 64 Winchester, Venice, San Diego, Orleans – 2004-10
• AMD Athlon 64 X2 Manchester, Toledo, Windsor – 2005-05
• AMD Sempron Palermo and Manila – 2004-08
• AMD Turion 64 Lancaster and Richmond – 2005-03
• AMD Turion 64 X2 Taylor and Trinidad – 2006-05
• AMD Opteron Venus, Troy, and Athens – 2005-08
• AMD Dual-core Opteron Denmark, Italy, Egypt, Santa Ana, and Santa Rosa
• VIA C7 – 2005-05
• Loongson (Godson) 2Е STLS2E02 – 2007-04
• Loongson (Godson) 2F STLS2F02 – 2008-07
• MCST-4R – 2010-12
• Elbrus-2C+ – 2011-11

Processors using 65 nm manufacturing technology

Main article: 65 nm process

• Sony–Toshiba EE+GS (PStwo)^[103] – 2005
• Intel Pentium 4 (Cedar Mill) – 2006-01-16
• Intel Pentium D 900-series – 2006-01-16
• Intel Celeron D (Cedar Mill cores) – 2006-05-28
• Intel Core – 2006-01-05
• Intel Core 2 – 2006-07-27
• Intel Xeon (Sossaman) – 2006-03-14
• AMD Athlon 64 series (starting from Lima) – 2007-02-20
• AMD Turion 64 X2 series (starting from Tyler) – 2007-05-07
• AMD Phenom series
• IBM's Cell Processor – PlayStation 3 – 2007-11-17
• IBM's z10
• Microsoft Xbox 360 "Falcon" CPU – 2007–09
• Microsoft Xbox 360 "Opus" CPU – 2008
• Microsoft Xbox 360 "Jasper" CPU – 2008–10
• Microsoft Xbox 360 "Jasper" GPU – 2008–10
• Sun UltraSPARC T2 – 2007–10
• AMD Turion Ultra – 2008-06^[104]
• TI OMAP 3 Family^[105] – 2008-02
• VIA Nano – 2008-05
• Loongson – 2009
• NVIDIA GeForce 8800GT GPU – 2007

Processors using 45 nm technology

Main article: 45 nm process

• Matsushita released the 45 nm Uniphier in 2007.^[106]
• Wolfdale, Yorkfield, Yorkfield XE and Penryn are Intel cores sold under the Core 2 brand.
• Intel Core i7 series processors, i5 750 (Lynnfield and Clarksfield)
• Pentium Dual-Core Wolfdale-3M are current^[when?] Intel mainstream dual core sold under the Pentium brand.
• Diamondville, Pineview are current^[when?] Intel cores with hyper-threading sold under the Intel Atom brand.
• AMD Deneb (Phenom II) and Shanghai (Opteron) Quad-Core Processors, Regor (Athlon II) dual core processors , Caspian (Turion II) mobile dual core processors.
• AMD (Phenom II) "Thuban" Six-Core Processor (1055T)
• Xenon in the Xbox 360 S model.
• Sony–Toshiba Cell Broadband Engine in PlayStation 3 Slim model – September 2009.
• Samsung S5PC110, as known as Hummingbird.
• Texas Instruments OMAP 36xx.
• IBM POWER7 and z196
• Fujitsu SPARC64 VIIIfx series
• Espresso (microprocessor) Wii U CPU

Chips using 32 nm technology

Main article: 32 nm process

• Toshiba produced commercial 32 Gb NAND flash memory chips with the 32 nm process in 2009.^[107]
• Intel Core i3 and i5 processors, released in January 2010^[108]
• Intel 6-core processor, codenamed Gulftown^[109]
• Intel i7-970, was released in late July 2010, priced at approximately US$900
• AMD FX Series processors, codenamed Zambezi and based on AMD's Bulldozer architecture, were released in October 2011. The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design.
• Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in September 2011^[110]

Chips using 24–28 nm technology

• SK Hynix announced that it could produce a 26 nm flash chip with 64 Gb capacity; Intel Corp. and Micron Technology had by then already developed the technology themselves. Announced in 2010.^[111]
• Toshiba announced that it was shipping 24 nm flash memory NAND devices on August 31, 2010.^[112]
• In 2016 MCST's 28 nm processor Elbrus-8S went for serial production.^[113][114]

Chips using 22 nm technology

Main article: 22 nm process

• Intel Core i7 and Intel Core i5 processors based on Intel's Ivy Bridge 22 nm technology for series 7 chip-sets went on sale worldwide on April 23, 2012.^[115]

Chips using 20 nm technology

• Samsung Electronics began mass production of 64 Gb NAND flash memory chips using a 20 nm process in 2010.^[116]
• Nvidia Tegra X1 (Nintendo Switch and Nvidia Shield TV)

Chips using 16 nm technology

• TSMC first began 16 nm FinFET chip production in 2013.^[117]
• Nvidia Tegra X1+ (later Nintendo Switch and Nvidia Shield TV models)

Chips using 14 nm technology

Main article: 14 nm process

• Intel Core i7 and Intel Core i5 processors based on Intel's Broadwell 14 nm technology was launched in January 2015.^[118]
• AMD Ryzen processors based on AMD's Zen or Zen+ architectures and which uses 14 nm FinFET technology.^[119]

Chips using 10 nm technology

Main article: 10 nm process

• Samsung announced that it had begun mass production of multi-level cell (MLC) flash memory chips using a 10 nm process in 2013.^[120] On 17 October 2016, Samsung Electronics announced mass production of SoC chips at 10 nm.^[121]
• TSMC began commercial production of 10 nm chips in early 2016, before moving onto mass production in early 2017.^[122]
• Samsung began shipping Galaxy S8 smartphone in April 2017 using the company's 10 nm processor.^[123]
• Apple delivered second-generation iPad Pro tablets powered with TSMC-produced Apple A10X chips using the 10 nm FinFET process in June 2017.^[124]

Chips using 7 nm technology

Main article: 7 nm process

• TSMC began risk production of 256 Mbit SRAM memory chips using a 7 nm process in April 2017.^[125]
• Samsung and TSMC began mass production of 7 nm devices in 2018.^[126]
• Apple A12 and Huawei Kirin 980 mobile processors, both released in 2018, use 7 nm chips manufactured by TSMC.^[127]
• AMD began using TSMC 7 nm starting with the Vega 20 GPU in November 2018,^[128] with Zen 2-based CPUs and APUs from July 2019,^[129] and for both PlayStation 5 ^[130] and Xbox Series X/S ^[131] consoles' APUs, released both in November 2020.

Chips using 5 nm technology

Main article: 5 nm process

• Samsung began production of 5 nm chips (5LPE) in late 2018.^[132]
• TSMC began production of 5 nm chips (CLN5FF) in April 2019.^[133]

Chips using 3 nm technology

Main article: 3 nm process

• TSMC have announced plans to release 3 nm devices during 2021–2022.^[134][135]
• Samsung Electronics have begun risk production of 3 nm GAAFET transistors in June 2022.^[136]
• Apple A17 Pro (iPhone 15 Pro)

See also

• Foundry model
• MOSFET
• Semiconductor device fabrication
• Transistor count