List of semiconductor fabrication plants

This is a list of semiconductor fabrication plants, factories where integrated circuits (ICs), also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers (IDMs) that design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by pure play foundries that manufacture designs from fabless companies and do not design their own ICs. Some pure play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.

See also: List of MEMS foundries

Glossary of terms

• Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
• Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
• Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
• Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
• Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.

Open plants

Operating fabs include foundries from TSMC, GlobalFoundries, Silex Microsystems, Tower Semiconductor, Advanced Micro Foundry, VTT, SilTerra and IHP Microelectronics amongst others.^[1]

Company	Plant name	Plant location	Plant cost (in US$ billions)	Started production	Wafer size (mm)	Process technology node (nm)	Production capacity (Wafers/Month)	Technology / products
STMicroelectronics		France, Crolles		2003	200, 300	28, 55, 65		Foundry, SiGe BiCMOS, FD-SOI
nLIGHT		United States, Washington, Vancouver		2001				Laser diodes
Safran Sensing Technologies Switzerland (formerly Colibrys)		Switzerland, Yverdon-les-Bains			150			Foundry, MEMS
Pure Wafer		United States, Prescott AZ[2]						Foundry
EM Microelectronic		Switzerland, La Tène, Neuchâtel		1975		180		Foundry, microcontrollers, ASIC, RFID, smart cards
UMC – He Jian	Fab 8N	China, Suzhou	0.750,[3] 1.2, +0.5	2003, May[3]	200	4000–1000, 500, 350, 250, 180, 110	77,000	Foundry
UMC	Fab 6A	Taiwan, Hsinchu	0.35[3]	1989[3]	150	450	31,000	Foundry
UMC	Fab 8AB	Taiwan, Hsinchu	1[3]	1995[3]	200	250	67,000[4]	Foundry
UMC	Fab 8C	Taiwan, Hsinchu	1[3]	1998[3]	200	350–110	37,000	Foundry
UMC	Fab 8D	Taiwan, Hsinchu	1.5[3]	2000[3]	200	90	31,000	Foundry
UMC	Fab 8E	Taiwan, Hsinchu	0.96[3]	1998[3]	200	180	37,000	Foundry
UMC	Fab 8F	Taiwan, Hsinchu	1.5[3]	2000[3]	200	150	40,000	Foundry
UMC	Fab 8S	Taiwan, Hsinchu	0.8[3]	2004[3]	200	350–250	31,000	Foundry
UMC	Fab 12A	Taiwan, Tainan	4.65, 4.1, 6.6, 7.3[3]	2001, 2010, 2014, 2017[3]	300	28, 14	87,000[4]	Foundry
UMC	Fab 12i	Singapore	3.7[3]	2004[3]	300	130–40	53,000	Foundry
UMC – United Semiconductor	Fab 12X	China, Xiamen	6.2	2016	300	55–28	19,000-25,000 (2021)	Foundry
UMC – USJC (formerly MIFS) (formerly Fujitsu)	Fab 12M (original Fujitsu installations)[5]	Japan, Mie Prefecture		1974	150, 200, 300[6]	90–40	33,000	Foundry
Texas Instruments	Miho	Japan, Ibaraki, Miho			200	350, 250[7]	40,000[8]	Analog, DLP[9]
Texas Instruments (formerly Spansion)	Aizu[10]	Japan, Fukushima, Aizuwakamatsu			200			Analog
Texas Instruments (formerly National Semiconductor)	MFAB[11]	United States, Maine, South Portland	0.932	1997	200	350, 250, 180		Analog
Texas Instruments (formerly Micron) (formerly IM Flash)	LFAB	United States, Utah, Lehi	1.3[12] (+ 3–4, future)[13]		300	65–45	70,000	Analog, mixed signal, logic NAND FLASH (former), 3D XPoint (former)
Texas Instruments	RFAB1[14]	United States, Texas, Richardson		2009	300	250, 180	20,000[15]	Analog
Texas Instruments	RFAB2	United States, Texas, Richardson		2022	300			Analog
Texas Instruments	DMOS5	United States, Texas, Dallas		1984	200	250, 180		Analog, DLP
Texas Instruments	DMOS6	United States, Texas, Dallas		2000	300	130–45	22,000[16]	Logic, Analog
Texas Instruments	DFAB	United States, Texas, Dallas		1966	150, 200			Mixed Signal, Analog
Texas Instruments	SFAB	United States, Texas, Sherman		1965	150			Analog
Texas Instruments	FFAB	Germany, Bavaria, Freising			200	1000, 180	37,500 (450,000 per year)[17]	Analog
Texas Instruments (formerly SMIC – Cension)	CFAB	China, Chengdu			200		30,000[18]	Analog
Tsinghua Unigroup[19]		China, Nanjing	10 (first phase), 30	Planned	300		100,000 (first phase)	3D NAND
Tsinghua Unigroup – XMC (formerly Xinxin)[20]	Fab 1	China, Wuhan[3]	1.9	2008	300	90, 65, 60, 50, 45, 40, 32	30,000[21]	Foundry, NOR
Tsinghua Unigroup – Yangtze Memory Technologies (YMTC) – XMC (formerly Xinxin)[20][21][19]	Fab 2	China, Wuhan	24	2018[3]	300	20	200,000	3D NAND
ChangXin Memory – (formerly Innotron Memory)	Fab 1[22]	China, Hefei	8[23]	2019[24]	300	19	20,000–40,000	DRAM
SMIC	S1 Mega Fab (S1A/S1B/S1C)[25]	China, Shanghai			200	350–90	115,000[26]	Foundry
SMIC	S2 (Fab 8)[25]	China, Shanghai			300	45/40–32/28	20,000	Foundry
SMIC – SMSC	SN1[25]	China, Shanghai	10	2020[27]	300	14	70,000[27]	Foundry
SMIC	B1 Mega Fab (Fab 4, Fab 6)[25]	China, Beijing		2004	300	180–90/55	52,000	Foundry
SMIC	B2A[25]	China, Beijing	3.59[28]	2014	300	45/40–32/28	41,000	Foundry
SMIC	Fab 15[25]	China, Shenzhen		2014	200	350–90	55,000	Foundry
SMIC	Fab 7[25]	China, Tianjin		2004	200	350–90	60,000[29]	Foundry
SMIC	Jingcheng	China, Beijing	7.7[30]	Under construction	300	28	100,000	Foundry
SMIC	Lingang	China, Shanghai	8.87[31]	Under construction	300	28	100,000	Foundry
SMIC	Shenzhen	China, Shenzhen	2.35[32]	Under construction	300	28	40,000	Foundry
SMIC	Xiqing	China, Tianjin	7.5[33]	Under construction	300	28	100,000	Foundry
Wuxi Xichanweixin (formerly SMIC – LFoundry [de]) (formerly LFoundry [de]) (formerly Micron)[34] (formerly Texas Instruments)	LF	Italy, Abruzzo, Avezzano		1995	200	180–90	40,000
Nanya	Fab 2	Taiwan, Linkou	0.8	2000	200[35]	175	30,000	DRAM
Nanya	Fab 3A[36]	Taiwan, New Taipei City[37]	1.85[38]	2018	300	70-20	34,000[39]	DRAM
Nanya		Taiwan, New Taipei City[40]	10.66	Under construction	300	10	15,000–45,000	DRAM
MESA+ Institute	NANOLAB	Netherlands, Enschede						Academic research, R&D activities, pilot production for MEMS, Photonics, Microfluidics
Micron	Fab 4[41]	United States, Idaho, Boise			300			R&D
Micron (formerly Dominion Semiconductor)	Fab 6	United States, Virginia, Manassas		1997	300	25	70,000	DRAM, NAND FLASH, NOR
Micron (formerly TECH Semiconductor)	Fab 7 (formerly TECH Semiconductor, Singapore)[42]	Singapore			300		60,000	NAND FLASH
Micron (formerly IM Flash)[43]	Fab 10[44]	Singapore	3	2011	300	25	140,000[45]	NAND FLASH
Micron (formerly Inotera)	Fab 11[46]	Taiwan, Taoyuan			300	20 and under	125,000[47]	DRAM
Micron	Fab 13[48]	Singapore			200			NOR
Micron		Singapore[49]			200			NOR Flash
Micron	Micron Semiconductor Asia	Singapore[49]
Micron		China, Xi'an[49]
Micron (formerly Elpida Memory)	Fab 15 (formerly Elpida Memory, Hiroshima)[41][49]	Japan, Hiroshima			300	20 and under	100,000	DRAM
Micron (formerly Rexchip)	Fab 16 (formerly Rexchip, Taichung)[41]	Taiwan, Taichung			300	30 and under	80,000	DRAM, FEOL
Micron (formerly Cando)	Micron Memory Taiwan[49]	Taiwan, Taichung		?, 2018	300			DRAM, BEOL
Micron	A3	Taiwan, Taichung[50]		Under construction	300			DRAM
Intel	D1B	United States, Oregon, Hillsboro		1996	300	22, 14, 10		Microprocessors[51]
Intel	D1C[52][51]	United States, Oregon, Hillsboro		2001	300	22, 14, 10		Microprocessors[51]
Intel	D1D[52][51]	United States, Oregon, Hillsboro		2003	300	14, 10, 7		Microprocessors[51]
Intel	D1X[53][51]	United States, Oregon, Hillsboro		2013	300	14, 10, 7		Microprocessors[51]
Intel	Fab 12[52][51]	United States, Arizona, Chandler		1996	300	65, 22, 14		Microprocessors & chipsets[51]
Intel	Fab 32[52][54]	United States, Arizona, Chandler	3	2007	300	45
Intel	Fab 32[52][51]	United States, Arizona, Chandler		2007	300	32, 22		Microprocessors[51]
Intel	Fab 42[55][56][51]	United States, Arizona, Chandler	10[57]	2020[58]	300	10, 7		Microprocessors[51]
Intel	Fab 52, 62[59][60]	United States, Arizona, Chandler	20[59]	2024[59]				Microprocessors[59]
Intel	Fab 11x[52][51]	United States, New Mexico, Rio Rancho		2002	300	45, 32		Microprocessors[51]
Intel (formerly Micron) (formerly Numonyx) (formerly Intel)	Fab 18[61]	Israel, Southern District, Kiryat Gat		1996	200, 300	180, 90, 65, 45		Microprocessors and chipsets,[62] NOR flash
Intel	Fab 10[52]	Ireland, County Kildare, Leixlip		1994	300
Intel	Fab 14[52]	Ireland, County Kildare, Leixlip		1998	300
Intel	Fab 24[52][51]	Ireland, County Kildare, Leixlip		2004	300	90, 65, 14[63]		Microprocessors, Chipsets and Comms[51]
Intel	Fab 28[52][51]	Israel, Southern District, Kiryat Gat		2008	300	45, 22, 10		Microprocessors[51]
Intel	Fab 38[64]	Israel, Southern District, Kiryat Gat		Under construction	300			Microprocessors[51]
Intel	Fab 68[52][65]	China, Dalian	2.5	2010	300	65[66]	30,000–52,000	Microprocessors (former), VNAND[51]
Costa Rican Ministry of Innovation, Science, Technology and Telecommunications	Centro de Exelencia, Distrito Tecnologico T24	Costa Rica, San Jose, San Jose	0.5	Under Construction	300	20 and under		Research on Foundry, AI BEOL & microprocessors
Tower Semiconductor (formerly Maxim) (formerly Philips) (formerly VLSI)	Fab 9[67][68]	United States, Texas, San Antonio		2003	200	180	28,000	Foundry, Al BEOL, Power, RF Analog
Tower Semiconductor (formerly National Semiconductor)	Fab 1[69]	Israel, Northern District, Migdal HaEmek	0.235[3]	1989, 1986[3]	150	1000–350	14,000	Foundry, Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete
Tower Semiconductor	Fab 2[69]	Israel, Northern District, Migdal HaEmek	1.226[3]	2003	200	180–130	51,000[3]	Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS
Tower Semiconductor (formerly Jazz Technologies) (formerly Conexant) (formerly Rockwell)	Fab 3,[69] Newport Beach[3]	United States, California, Newport Beach	0.165[3]	1967, 1995[3]	200	500-130	25,000[3]	Foundry, Al BEOL, SiGe, EPI
Tower Semiconductor – TPSCo (formerly Panasonic)	Fab 5,[69] Tonami[70]	Japan, Tonami		1994	200	500–130		Foundry, Analog/Mixed-Signal, Power, Discrete, NVM, CCD
Tower Semiconductor – TPSCo (formerly Panasonic)	Fab 7,[69] Uozu[70]	Japan, Uozu		1984	300	65. 45		Foundry, CMOS, CIS, RF SOI, Analog/Mixed-Signal
Tower Semiconductor – TPSCo (formerly Panasonic)	Fab 6,[69] Arai[70]	Japan, Arai		1976	200	130–110		Foundry, Analog/Mixed-Signal, CIS, NVM,Thick Cu RDL
Nuvoton[71]	Fab2	Taiwan, Hsinchu			150	1000-350	45,000[71]	Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor
ISRO	SCL[72]	India, Mohali		2006	200	180		MEMS, CMOS, CCD, N.S.
STAR-C[73][74]	MEMS[74]	India, Bangalore		1996	150	1000–500		MEMS
STAR-C[73][74]	CMOS[74]	India, Bangalore		1996	150	1000–500		CMOS
GAETEC[73][75]	GaAs[75]	India, Hyderabad		1996	150	700–500		MESFET
BAE Systems (formerly Sanders)		United States, New Hampshire, Nashua[3]		1985[3]	100, 150	140, 100, 70, 50		MMIC, GaAs, GaN-on-SiC, foundry
Qorvo (formerly RF Micro Devices)		United States, North Carolina, Greensboro[76]			100,150	500	8,000	SAW filters, GaAs HBT, GaAs pHEMT, GaN
Qorvo (formerly TriQuint Semiconductor) (formerly Micron) (formerly Texas Instruments) (formerly TwinStar Semiconductor)		United States, Texas, Richardson[76]	0.5	1996	100, 150, 200	350, 250, 150, 90	8,000	DRAM (former), BAW filters, power amps, GaAs pHEMT, GaN-on-SiC
Qorvo (formerly TriQuint Semiconductor)		United States, Oregon, Hillsboro[76]			100, 150	500		Power amps, GaAs
Apple (formerly Maxim) (formerly Samsung)	X3[77]	United States, California, San Jose		?, 1997, 2015[78]		600–90
Analog Devices (formerly Maxim Integrated)	MaxFabNorth[79]	United States, Oregon, Beaverton	(+1, future)[80]
Rohm[81] (formerly Renesas)	Shiga Factory	Japan			200	150		IGBT, MOSFET, MEMS
Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)[81][82]	Miyasaki	Japan				150		MEMS
Rohm (Lapis Semiconductor)[81]	Building No.1	Japan		1961[83]				Transistors
Rohm (Lapis Semiconductor)[81]	Building No.2	Japan		1962[83]				Transistors
Rohm (Lapis Semiconductor)[81]	Building No.3	Japan		1962[83]				Transistors
Rohm (Lapis Semiconductor)[81]	Building No.4	Japan		1969[83]				Transistors
Rohm (Lapis Semiconductor)[81]	Chichibu Plant	Japan		1975[83]				DRAM
Rohm (Lapis Semiconductor)[81]	VLSI Laboratory No. 1	Japan		1977[83]				VLSI
Rohm (Lapis Semiconductor)[81]	VLSI Laboratory No. 2	Japan		1983[83]
Rohm (Lapis Semiconductor)[81]	VLSI Laboratory No. 3	Japan		1983[83]				DRAM
Rohm (Lapis Semiconductor)[81]		Thailand		1992[83]
Rohm (Lapis Semiconductor)[81]	ULSI Laboratory No. 1	Japan		1992[83]		500		DRAM
Rohm (Kionix)[84] (formerly Renesas Kyoto)	Kyoto	Japan, Kyoto			200			MEMS
Fuji Electric[85]	Hokuriku	Japan, Toyama prefecture
Fuji Electric[86]	Matsumoto[87]	Japan, Nagano prefecture			100, 150	2000–1000	20,000	CMOS. BiCMOS, bipolar, ASICs, discrete
Fujitsu	Kawasaki	Japan, Kawasaki		1966[88]
Fujitsu	Kumagaya Plant[89]	Japan, Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801		1974
Fujitsu[90]	Suzaka Plant	Japan, Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501
Denso (formerly Fujitsu)	Iwate Plant[91][6][87]	Japan, Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593			125, 150, 200	1500–350	100,000	CMOS, MOS, bipolar
Denso[92]	Denso Iwate[93][94][95]	Japan, Iwate Prefecture, Kanegasaki-cho	0.088	Under construction, 2019, May (planned)				Semiconductor wafers and sensors (since June 2017)
Canon Inc.	Oita[96]	Japan
Canon Inc.	Kanagawa[97]	Japan
Canon Inc.	Ayase[96]	Japan
Sharp Corporation	Fukuyama[98][87]	Japan			125, 150, 200	1000, 800, 600	85,000	CMOS
Japan Semiconductor [99]	Iwate	Japan
Japan Semiconductor[99]	Oita	Japan
Japan Advanced Semiconductor Manufacturing, Inc[100]	Kumamoto	Japan	20+	2024	300	40, 22/28, 12/16 and 6/7	100,000+
Kioxia	Yokkaichi Operations[101][102]	Japan, Yokkaichi		1992			173,334[103][104][105][106]	Flash Memory
Kioxia/SanDisk	Y5 Phase 1 (at Yokkaichi Operations)	Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[107]		2011				Flash
Kioxia/SanDisk	Y5 Phase 2[107] (at Yokkaichi Operations)	Japan, Mie		2011	300	15[108]		Flash
Kioxia[109]	Y3 (at Yokkaichi Operations)	Japan, Yokkaichi			300			NAND Memory
Kioxia[110]	Y4 (at Yokkaichi Operations)	Japan, Yokkaichi		2007	300			NAND Memory
Kioxia[111]	Kaga Toshiba	Japan, Ishikawa						Power semiconductor devices
Kioxia[112]	Oita Operations	Japan, Kyushu
Kioxia[113][114]	Y6 (phase 1) (at Yokkaichi Operations)[115]	Japan, Yokkaichi	1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[116][102]	2018	300			BiCS FLASH™
Kioxia[113][114]	Y6 (phase 2) (at Yokkaichi Operations)	Japan, Yokkaichi	1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[116][102]	Planned	300			BiCS FLASH™
Kioxia[113][114]	Y7	Japan, Yokkaichi	4.6[117][118]	Planned	300			BiCS FLASH™
Kioxia[113]	Y2 (at Yokkaichi Operations)	Japan, Yokkaichi		1995				3D NAND
Kioxia[119][120]	New Y2 (at Yokkaichi Operations)	Japan, Yokkaichi		2016, July 15	300			3D NAND
Kioxia[121][122][123][124]	K1	Japan, Iwate Prefecture		Under construction	300			3D NAND
MinebeaMitsumi[125]	Rinkai Factory	Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319–1221						MEMS Foundry
MinebeaMitsumi[125]	Haramachi Factory	Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041						Power semiconductors
Hitachi Energy (Formerly ABB)[126]	Lenzburg	Switzerland, Aargau, Lenzburg	0.140	2010 (second phase)	130, 150		18,750 (225,000 per year)	High power semiconductors, diodes, IGBT, BiMOS
Mitsubishi Electric[127]	Power Device Works, Kunamoto Site[87]	Japan			100, 125, 150, 200	2000–400	122,000	Power semiconductors
Mitsubishi Electric[128]	High frequency optical device manufacturing plant[87]	Japan, Hyogo Prefecture[128]			100, 125		30,000	High frequency semiconductor devices (GaAsFET, GaN, MMIC)[128]
Powerchip Semiconductor	Memory Foundry, Fab P1[129][130]	Taiwan, Hsinchu	2.24[3]	2002[3]	300	90, 70, 22[131]	80,000	Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor	Fab P2[130]	Taiwan, Hsinchu, Hsinchu Science Park	1.86[3]	2005[3]	300	90, 70, 22[131]	80,000	Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor (formerly Macronix)	Fab P3[130]	Taiwan, Hsinchu, Hsinchu Science Park			300	90, 70, 22[131]	20,000	Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
SPIL (formerly ProMOS)	ProMOS Fab 4[132][133]	Taiwan, Taichung	1.6		300	70		Advanced Packaging
Macronix (formerly ProMOS)[134]	Fab 5	Taiwan, Hsinchu[135]			300		50,000
Macronix[134]	Fab 2	Taiwan			200		48,000
Hon Young Semiconductor (formerly Macronix[134])	Fab 1[136]				150	800-400	40,000	Foundry, SiC, Automotive MOSFETs, MEMS
Renesas[137]	Naka Factory	Japan		2009	300	28[138]
Renesas[137]	Takasaki Factory	Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021
Renesas[137]	Kawashiri Factory	Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861–4195
Renesas[137]	Saijo Factory	Japan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501
Renesas – Intersil[137]	Palm Bay	United States, Florida, Palm Bay
Bosch (formerly TSI Semiconductors[139]) (formerly Renesas)	Roseville fab, M-Line, TD-Line, K-Line[140][3]	United States, California, Roseville		1992, 1985[3]	200
TDK – Micronas	FREIBURG[141][142]	Germany, 19 D-79108, Hans-Bunte-Strasse
TDK (formerly Renesas)	Tsuruoka Higashi[143][144]				125[145]
TDK – Tronics		United States, Texas, Addison[146]
Silanna (formerly Sapphicon Semiconductor)		Australia, New South Wales, Sydney[3]	0.030	1965,1989[3]	150
Silanna (formerly Sapphicon Semiconductor) (formerly Peregrine Semiconductor) (formerly Integrated Device Technology)		Australia, New South Wales, Sydney [147]			150	500, 250		RF CMOS, SOS, foundry
Murata Manufacturing[148]	Nagano[145]	Japan	0.100		Murata en France (ex IPDIA)[149]			SAW filters[145]
Murata Manufacturing[148]	Otsuki[145]	Japan
Murata Manufacturing[148]	Kanazawa	Japan	0.111					SAW filters[145]
Murata Manufacturing (formerly Fujifilm)[150][151]	Sendai	Japan, Miyagi Prefecture	0.092[145]					MEMS[152]
Murata Manufacturing[150]	Yamanashi	Japan, Yamanashi Prefecture
Murata Manufacturing[153]	Yasu	Japan, Shiga Prefecture, Yasu
Murata Electronics (Finland)[154] (formerly VTI, since 1979 Vaisalas int. semicon. line)[155]	Vantaa	Finland		2012,[156] expanded 2019[157]				3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc.[158]
Mitsumi Electric[159]	Semiconductor Works #3	Japan, Atsugi Operation Base		2000
Mitsumi Electric[159]		Japan, Atsugi Operation Base		1979
Sony[160]	Kagoshima Technology Center[87]	Japan, Kagoshima		1973	100, 125, 150	2000–500	110,000	Bipolar CCD, MOS, MMIC, SXRD
Sony[160]	Oita Technology Center	Japan, Oita		2016				CMOS Image Sensor
Sony[160]	Nagasaki Technology Center[87]	Japan, Nagasaki		1987	150	1000-350	80,000	MOS LSI, CMOS Image Sensors, SXRD
Sony[160]	Kumamoto Technology Center	Japan, Kumamoto		2001				CCD Image Sensors, H-LCD, SXRD
Sony[160]	Shiroishi Zao Technology Center	Japan, Shiroishi		1969				Semiconductor Lasers
Sony	Sony Shiroishi Semiconductor Inc.	Japan, Miyagi						Semiconductor Lasers[161]
Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC)[160][162][163]	Yamagata Technology Center[87]	Japan, Yamagata		2014 (Sony)	100, 125, 150, 200	3000, 2000, 800		MOS, bipolar, CMOS Image Sensor, eDRAM (formerly)
SK Hynix[164]		China, Chongqing
SK Hynix[164]		China, Chongqing
SK Hynix[165][166]		South Korea, Cheongju, Chungcheongbuk-do		Under construction[167]				NAND Flash
SK Hynix[166]		South Korea, Cheongju		Under construction				NAND Flash
SK Hynix	HC1	China, Wuxi			300		100,000[20]	DRAM
SK Hynix	HC2	China, Wuxi			300		70,000[20]	DRAM
SK Hynix[166]	M16	South Korea, Icheon	3.13 (13.4 total planned)	2021 (planned)	300	10 (EUV)	15,000–20,000 (initial)	DRAM
LG Innotek[168]	Paju	South Korea, 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842						LED Epi-wafer, Chip, Package
ON Semiconductor (formerly GlobalFoundries) (formerly IBM)[169][170][171]		United States, New York, East Fishkill	2.5, +.29 (future)[172]	2002	300	90–22, 14	12,000–15,000[172]	Foundry, RF SOI, SOI FinFET (former), SiGe, SiPh
ON Semiconductor (formerly LSI)	Gresham[173]	United States, Oregon, Gresham			200	110
ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor)		United States, Pennsylvania, Mountain Top		1960–1997	200	350
ON Semiconductor (formerly TESLA)	Roznov	Czech Republic, Zlín, Rožnov pod Radhoštěm		1956	150, 200	1000	80,000	Si, SiC
ON Semiconductor (formerly Motorola)	ISMF	Malaysia, Seremban			150	350	80,000	Discrete
ON Semiconductor (formerly Fujitsu)[174][175]	Aizu Wakamatsu Plant[176][87]	Japan, Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502		1970[88]	150, 200[177][178][179][180]	2000-130		Memory, Logic
JS Foundry K.K. (formerly ON Semiconductor) (formerly Sanyo)[181][182]	Niigata[87]	Japan, Niigata			125, 150	2000–600, 350	120,000	CMOS, bipolar, BiCMOS
LA Semiconductor (formerly ON Semiconductor) (formerly AMI Semiconductor)	Pocatello[183]	United States, Idaho, Pocatello		1997[184]	200	350
Diodes Incorporated[185] (formerly ON Semiconductor) (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor)	SPFAB	United States, Maine, South Portland		1960–1997	200	350
Diodes Incorporated[186] (formerly Zetex Semiconductors)	OFAB	UK, England, Greater Manchester, Oldham			150
Diodes Incorporated (formerly BCD Semi)[187]		China			150	4000–1000
Lite-On Optoelectronics[188]		China, Tianjin
Lite-On Optoelectronics[188]		Thailand, Bangkok
Lite-On Optoelectronics[188]		China, Jiangsu
Lite-On Semiconductor[189]	Keelung Plant	Taiwan, Keelung		1990	100			Thyristor, DIscrete
Lite-On Semiconductor[189]	Hsinchu Plant	Taiwan, Hsinchu		2005				Bipolar BCD, CMOS
Lite-On Semiconductor[189]	Lite-On Semi (Wuxi)	China, Jiangsu		2004	100			Discrete
Lite-On Semiconductor[189]	Wuxi WMEC Plant	China, Jiangsu		2005				Discrete, Power, Optical ICs
Lite-On Semiconductor[189]	Shanghai (SSEC) Plant	China, Shanghai		1993	76			Fab, Assembly
Trumpf[190] (formerly Philips Photonics)		Germany, Baden-Württemberg, Ulm						VCSEL
Philips[191]		Netherlands, North Brabant, Eindhoven			150, 200		30,000	R&D, MEMS
Newport Wafer Fab[192] (formerly Infineon Technologies)	FAB11	UK, Wales, Newport			200[193]	700-180[193]	32,000[193]	Foundry, Compound Semiconductors, IC, MOSFET, IGBT[194]
Nexperia (formerly NXP Semiconductors) (formerly Philips)	Hamburg site[195]	Germany, Hamburg		1953	200		35,000	Small-signal and bipolar discrete devices
Nexperia (formerly NXP Semiconductors) (formerly Philips) (formerly Mullard)	Manchester[195]	UK, England, Greater Manchester, Stockport		1987?	150, 200		24,000	GaN FETs, TrenchMOS MOSFETs
NXP Semiconductors (formerly Philips)	ICN8	Netherlands, Gelderland, Nijmegen			200		40,000+[196]	SiGe
NXP Semiconductors - SSMC	SSMC	Singapore	1.7[3]	2001[3]	200	120	53,000	SiGe
NXP Semiconductors – Jilin Semiconductor		China, Jilin			130
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola)	Oak Hill Fab[197]	United States, Texas, Austin	0.8[198]	1991	200	250
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola)	Chandler Fab[199]	United States, Arizona, Chandler[200]	1.1[201] +0.1 (GaN)	1993	150 (GaN), 200	180		GaN-on-SiC pHEMT
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola)	ATMC[202]	United States, Texas, Austin		1995	200	90
AWSC		Taiwan, Tainan[3]		1999[3]	150		12,000	Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP
Skyworks Solutions[203] (formerly Conexant) (formerly Rockwell)		United States, California, Newbury Park			100, 150			Compound Semiconductors (GaAs, AlGaAs, InGaP)
Skyworks Solutions[203] (formerly Alpha Industries)		United States, Massachusetts, Woburn			100, 150			RF/cellular components (SiGe, GaAs)
Skyworks Solutions[203]		Japan, Osaka						SAW, TC-SAW Filters
Skyworks Solutions[203]		Japan, Kadoma						SAW, TC-SAW Filters
Skyworks Solutions[203]		Singapore, Bedok South Road						SAW, TC-SAW Filters
Win Semiconductor	Fab A[204]	Taiwan, Taoyuan City			150[205]	2000–10		Foundry, GaAs
Win Semiconductor	Fab B[204]	Taiwan, Taoyuan City			150[205]	2000–10		Foundry, GaAs, GaN
Win Semiconductor	Fab C	Taiwan, Taoyuan[3]	0.050, 0.178	2000, 2009[3]	150			Foundry, GaAs
ams[206]	FAB B	Austria, Styria, Unterpremstätten			200	350		Optoelectronics
ams Osram (formerly Osram Opto Semiconductors)		Malaysia, Kulim, Kulim Hi-Tech Park	0.350, 1.18[207]	2017, 2020 (second phase, planned)[208][209]	150			LEDs
ams Osram (formerly Osram Opto Semiconductors)		Malaysia, Penang[210][211]		2009	100			LEDs
ams Osram (formerly Osram Opto Semiconductors)		Germany, Bavaria, Regensburg[212]		2003, 2005 (second phase)[213]				LEDs
Winbond	Memory Product Foundry[214]	Taiwan, Taichung			300	46
Winbond	CTSP Site[215][216]	Taiwan, No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881			300
Winbond[217]				Planned	300
Vanguard International Semiconductor	Fab 1[136]	Taiwan, Hsinchu	0.997[3]	1994[3]	200	500, 350, 250	55,000	Foundry, CMOS
Vanguard International Semiconductor (formerly Winbond)	Fab 2 (formerly Fab 4&5)[218]	Taiwan, Hsinchu	0.965[3]	1998[3]	200		55,000	Foundry
Vanguard International Semiconductor Corporation (formerly GlobalFoundries) (formerly Chartered)	Fab 3E[219]	Singapore	1.3[3]		200	180	34,000	Foundry
TSMC	Fab 2[220][136]	Taiwan, Hsinchu	0.735[3]	1990[3]	150	800, 600, 500	88,000[221][3]	Foundry, CMOS
TSMC	Fab 3[136]	Taiwan, Hsinchu	2[3]	1995[3]	200	500, 350, 250	100,000[3]	Foundry, CMOS
TSMC	Fab 5[136]	Taiwan, Hsinchu	1.4[3]	1997[3]	200	350, 250, 180	48,000[3]	Foundry, CMOS
TSMC	Fab 6	Taiwan, Tainan	2.1[3]	2000, January; 2001[222]	200, 300	180–?	99,000[3]	Foundry
TSMC (formerly TASMC) (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments)[223][224][225]	Fab 7[226]	Taiwan			200	350, 250, 220, 180	33,000	Foundry (current) DRAM (former), Logic (former)
TSMC (formerly WSMC)	Fab 8[227]	Taiwan, Hsinchu	1.6[3]	1998[3]	200	250, 180	85,000[3]	Foundry
TSMC (formerly WSMC)[228]				2000	200	250, 150	30,000	Foundry
TSMC China Company	Fab 10	China, Shanghai	1.3[3]	2004[3]	200		74,000	Foundry
TSMC	Fab 12	Taiwan, Hsinchu	5.2, 21.6 (total, all phases combined)[3]	2001[3]	300	150–28	77,500–123,800 (all phases combined)[3]	Foundry
TSMC	Fab 12 (P4)	Taiwan, Hsinchu	6[3]	2009[3]	300	20	40,000[3]	Foundry
TSMC	Fab 12 (P5)	Taiwan, Hsinchu	3.6[3]	2011[3]	300	20	6,800[3]	Foundry
TSMC	Fab 12 (P6)	Taiwan, Hsinchu	4.2[3]	2013[3]	300	16	25,000	Foundry
TSMC	Fab 14	Taiwan, Tainan	5.1[3]	2002,[222] 2004[3]	300	20	82,500[3]	Foundry
TSMC	Fab 14 (B)	Taiwan, Tainan			300	16	50,000+[229]	Foundry
TSMC	Fab 14 (P3)[3]	Taiwan, Tainan	3.1[3]	2008[3]	300	16	55,000[3]	Foundry
TSMC	Fab 14 (P4)[3]	Taiwan, Tainan	3.750[3]	2011[3]	300	16	45,500[3]	Foundry
TSMC	Fab 14 (P5)[3]	Taiwan, Tainan	3.650[3]	2013[3]	300	16		Foundry
TSMC	Fab 14 (P6)[3]	Taiwan, Tainan	4.2[3]	2014[3]	300	16		Foundry
TSMC	Fab 14 (P7)[3]	Taiwan, Tainan	4.850[3]	2015[3]	300	16		Foundry
TSMC	Fab 15[230]	Taiwan, Taichung	9.3	2011	300	20	100,000+(166,000 estimate)[231][229][232]	Foundry
TSMC	Fab 15 (P1)[3]	Taiwan, Taichung	3.125[3]	2011	300		4,000[3]	Foundry
TSMC	Fab 15 (P2)[3]	Taiwan, Taichung	3.150[3]	2012[3]	300			Foundry
TSMC	Fab 15 (P3)[3]	Taiwan, Taichung	3.750[3]	2013[3]	300			Foundry
TSMC	Fab 15 (P4)[3]	Taiwan, Taichung	3.800[3]	2014[3]	300			Foundry
TSMC	Fab 15 (P5)[3]	Taiwan, Taichung	9.020[3]	2016[3]	300		35,000	Foundry
TSMC	Fab 18 (P1-P3)	Taiwan, Southern Taiwan Science Park[233][234]	17.08	2020 (P7 under construction)	300	5[235]	120,000	Foundry
TSMC	Fab 18 (P4-P6)	Taiwan, Southern Taiwan Science Park		2022 (planned), under construction	300	3[20][236][237]	120,000	Foundry
TSMC	Fab 21 (P1)	United States, Arizona, Phoenix	12[238]	Q4 2024 [239]	300	5 & 4[240]	20,000[240]	Foundry
TSMC	Fab 21 (P2)	United States, Arizona, Phoenix	65 (shared for Fab 21 site)[239]	2028 (planned), under construction[239][241]		3[239]		Foundry
TSMC	Fab 21 (P3)	United States, Arizona, Phoenix	65 (shared for Fab 21 site)[239]	2029-2030 (planned), under construction[239][241]		1.6 & 2[239]		Foundry
Epistar	Fab F1[242]	Taiwan, Longtan Science Park						LEDs
Epistar	Fab A1[242]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N2[242]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N8[242]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N1[242]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N3[242]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N6[242]	Taiwan, Chunan Science Park						LEDs
Epistar	Fab N9[242]	Taiwan, Chunan Science Park						LEDs
Epistar	Fab H1[242]	Taiwan, Central Taiwan Science Park						LEDs
Epistar	Fab S1[242]	Taiwan, Tainan Science Park						LEDs
Epistar	Fab S3[242]	Taiwan, Tainan Science Park						LEDs
Epistar (formerly TSMC)[243][244][245]		Taiwan, Hsin-Chu Science Park	0.080	2011, second half				LEDs
GCS		United States, California, Torrance[3]		1999[3]	100		6,400	Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs
Bosch		Germany, Baden-Württemberg, Reutlingen		1995[246]	150			ASIC, analog, power, SiC
Bosch		Germany, Saxony, Dresden	1.0[247]	2021	300	65
Bosch	WaferFab	Germany, Baden-Württemberg, Reutlingen	0.708[248]	2010[246]	200		30,000	ASIC, analog, power, MEMS
STMicroelectronics	AMK8 (second, newer fab)	Singapore, Ang Mo Kio		1995	200
STMicroelectronics (formerly SGS Microelettronica)	AMJ9 (first fab)	Singapore, Ang Mo Kio		1984[249]	150, 200		6" 14 kpcs/day, 8" 1.4 kpcs/day	Power-MOS/ IGBT/ bipolar/ CMOS
X-Fab	Erfurt	Germany, Thuringia, Erfurt		1985[3]	200[250]	1000-600[250]	11200–[250]	Foundry, InP
X-Fab (formerly ZMD)	Dresden	Germany, Saxony, Dresden	0.095[3]	1985[3]	200[251]	1000-350[251]	6000–[251]	Foundry, CMOS, GaN-on-Si
X-Fab (formerly Itzehoe)	Itzehoe	Germany, Schleswig-Holstein, Itzehoe			200[252]		13000–[252]	Foundry, MEMS
X-Fab (formerly 1st Silicon)[253][254]	Kuching	Malaysia, Kuching	1.89[3]	2000[3]	200[255]	350-130[255]	30,000–[255]	Foundry
X-Fab (formerly Texas Instruments)	Lubbock	United States, Texas, Lubbock	0.197[3]	1977[3]	150, 200[256]	1000-600[256]	15000–[256]	Foundry, SiC
X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM)[257]	ACL-AMF	France, Île-de-France, Corbeil-Essonnes		1991, 1964[3]	200	350-110		Foundry, CMOS, RF SOI
IXYS		Germany, Hesse, Lampertheim[258]						IGBT[258]
IXYS		UK, England, Wiltshire, Chippenham[258]
IXYS		United States, Massachusetts[258]
IXYS		United States, California[258]
Samsung	V1-Line[259]	South Korea, Hwaseong	6	2020, February 20	300	7		Foundry
Samsung	S5-Line	South Korea, Pyeongtaek			300			Foundry
Samsung	S4-Line	South Korea, Hwaseong			300			Foundry
Samsung	S3-Line	South Korea, Hwaseong	10.2, 16.2 (planned)[260][261]	2017[260]	300	10	200,000	Foundry
Samsung	S1-Line	South Korea, Giheung	33 (total)	2005 (second phase), 1983 (first phase)[262][263]	300	65–7	62,000	Foundry, CMOS, FDSOI
Samsung	Line-6	South Korea, Giheung			100, 150, 200	1500–500, 180–65		Foundry, CMOS, BiCMOS
Samsung	S6-Line	United States, Texas, Taylor			300			Foundry
Samsung	S2-Line	United States, Texas, Austin	16[264][265]	2011	300	65–11	92,000	Foundry, CMOS, FDSOI
Samsung	Pyeongtaek[266][267][260]	South Korea, Pyeongtaek	14.7, 27 (total)[268][265][269][270][271][272][273][167]	2017, July 6	300	14	450,000[274]	V-NAND, DRAM
Samsung	Samsung China Semiconductor[275]	China, Shaanxi Province						DDR Memory
Samsung	F1x1[276][260]	China, Xian	2.3[277]	2014 (first phase, second phase is under review)[260]	300	20	100,000	VNAND
Samsung	Giheung Campus[278]	South Korea, Gyeonggi-do, Yongin						LEDs
Samsung	Hwasung Campus[278]	South Korea, Gyeonggi-do, Hwaseong						LEDs
Samsung	Tianjin Samsung LED Co., Ltd.[278]	China, Tianjin, Xiqing						LEDs
Seagate		United States, Minnesota, Minneapolis[279]						Read/write heads,
Seagate		UK, Northern Ireland[280][281][282][283]						Read/write heads
Broadcom Inc. (formerly Avago)		United States, Colorado, Fort Collins[284]
Wolfspeed (formerly Cree Inc.)[285]	Durham	United States, North Carolina, Durham						Compound Semiconductors, LEDs
Wolfspeed (formerly Cree Inc.)[286]	Research Triangle Park	United States, North Carolina						GaN HEMT RF ICs
SMART Modular Technologies		Brazil, São Paulo, Atibaia		2006				Packaging
Infineon Technologies	Villach	Austria, Carinthia, Villach		1970[287]	100, 150, 200, 300			MEMS, SiC, GaN
Infineon Technologies	Dresden	Germany, Saxony, Dresden	3[288]	1994–2011[289]	200, 300	90
Infineon Technologies	Kulim[290]	Malaysia, Kulim		2006[291]	200, 300		50,000
Infineon Technologies	Kulim 2	Malaysia, Kulim		2015	200, 300		50,000
Infineon Technologies	Regensburg[292]	Germany, Bavaria, Regensburg		1959
Infineon Technologies	Cegled[293]	Hungary, Pest, Cegléd
Infineon Technologies (formerly Cypress Semiconductor) (formerly Spansion) (formerly AMD)	Austin	United States, Texas, Austin[294]	1.5	1995	200
D-Wave Systems[295]	Superconducting Foundry[296]							Quantum Processing Units (QPUs)[296]
GlobalFoundries (formerly AMD)	Fab 1 Module 1[297]	Germany, Saxony, Dresden	3.6[3]	2005	300	45-22	35,000[3]	Foundry, SOI, FDSOI
GlobalFoundries (formerly AMD)	Fab 1 Module 2	Germany, Saxony, Dresden	4.9[3]	1999	300	45-22	25,000[3]	Foundry, SOI
GlobalFoundries	Fab 1 Module 3	Germany, Saxony, Dresden	2.3[3]	2011[3]	300	45-22	6,000[3]	Foundry, SOI
GlobalFoundries (formerly Chartered)	Fab 2[219]	Singapore	1.3[3]	1995[3]	200	600-350	56,000[3]	Foundry, SOI
GlobalFoundries (formerly Chartered)	Fab 3/5[219]	Singapore	0.915, 1.2[3]	1997, 1995[3]	200	350-180	54,000	Foundry, SOI
GlobalFoundries (formerly Chartered)	Fab 6[219] (merged into Fab 7)	Singapore	1.4[3]	2000[3]	200, 300 (merged)	180-110	45,000	Foundry, SOI
GlobalFoundries (formerly Chartered)	Fab 7[297]	Singapore	4.6[3]	2005[3]	300	130, 110, 90, 65, 40	50,000	Foundry, Bulk CMOS, RF SOI
GlobalFoundries	Fab 8[297]	United States, New York, Malta	4.6, 2.1, (1, future)[298] 13+ (total)[172][299]	2012, 2014[3]	300	28, 22, 14, 12	60,000 (+12,500 future)	Foundry, High-K Metal Gate,[300] SOI FinFET
GlobalFoundries (formerly IBM[301])	Fab 9	United States, Vermont, Essex Junction		1957[302]	200	350-90	50,000[303]	Foundry, SiGe, RF SOI, GaN[303]
GlobalFoundries	Technology Development Center[3]	United States, New York, Malta	1.5[3]	2014[3]
SUNY Poly CNSE	NanoFab 300 North[304]	United States, New York, Albany	0.175, 0.050	2004, 2005	300	65, 45, 32, 22
SUNY Poly CNSE	NanoFab 200[305]	United States, New York, Albany	0.016	1997	200
SUNY Poly CNSE	NanoFab Central[304]	United States, New York, Albany	0.150	2009	300	22
Skorpios Technologies (formerly Novati) (formerly ATDF) (formerly SEMATECH)		United States, Texas, Austin[3][306]	0.065	1989[3]	200		10,000	MEMS, photonics, foundry
Opto Diode		United States, California, Camarillo[307]						LED, Photodiode, PbS/PbSe Infrared Detectors
Optek Technology[308]				1968	100, 150			GaAs, LEDs
II-VI (formerly Oclaro) (formerly Bookham) (formerly NORTHERN TELECOM SEMICONDUCTOR NORTHERN TELECOM EUROPE[308]) (formerly JDS Uniphase) (formerly Uniphase)								Semiconductor Lasers, Photodiodes
Infinera		United States, California, Sunnyvale[309][310]
Rogue Valley Microdevices[311][312][313]		United States, Oregon, Medford		2003	50.8–300			MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D
Atomica	Fab 1	United States, California, Goleta		2000	150, 200	350	20,000	Foundry: MEMS, Photonics, Sensors, Biochips
Sensera	uDev-1	United States, Massachusetts, Woburn		2014	150	700	1,000	MEMS, MicroDevice assembly
Rigetti Computing	Fab-1[314][315][316]	United States, California, Fremont			130			Quantum Processors
Polar Semiconductor[317]	FAB 1,2,3	United States, Minnesota, Bloomington			200			BCD, HV, GMR
Orbit Semiconductor[308]					100			CCD, CMOS
Entrepix		United States, Arizona, Tempe[3]		2003[3]
Technologies and Devices International		United States, Florida, Silver Springs[3]		2002[3]
Soraa Inc		United States, California[318][319]
Soraa Laser Diode[318]
Mirrorcle Technologies		United States, California, Richmond[320]
HTE LABS	HTE LABS	United States, California, San Jose	0.005	2009	100, 150	4000–1000	1,000	Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com
Unitec do Brasil		Brazil, Minas Gerais, Ribeirão das Neves		Planned
Unitec Blue[321]		Argentina, Buenos Aires Province, Chascomús	0.3 (1.2 planned)[322]	2013				RFID, SIM, EMV
Everlight	Yuan-Li Plant	Taiwan, Miao-Li						LEDs
Everlight	Pan-Yu Plant	China						LEDs
Everlight	Tu-Cheng Plant	Taiwan, Taipei Country						LEDs
Optotech[323]		Taiwan, Hsinchu						LEDs
Arima Optoelectronics		Taiwan, Hsinchu[3]		1999[3]
Episil Semiconductor		Taiwan, Hsinchu[3]		1992, 1990, 1988[3]
Episil Semiconductor		Taiwan, Hsinchu[3]		1992, 1990, 1988[3]
Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine[324][325]	NanChang Creative Sensor	China, Jiangxi		2007				Image Sensors
Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine [324]	Wuxi Creative Sensor	China, Jiangsu		2002
Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine [324]	Wuxi Creative Sensor	Taiwan, Taipei City		1998
Visera Technologies[326]	Headquarters Phase I	Taiwan, Hsinchu Science-based Industrial Park		2007, September				CMOS Image Sensors
Panjit		Taiwan, Kaohsiung[3]	0.1	2003[3]
Nanosystem Fabrication Facility		Hong Kong[327]
GTA Semiconductor (formerly ASMC)[328][329]	Fab 2, Fab 3[330]	China, Shanghai, Xuhui District			200	350, 180, 150[331]	55333	HV Analog, Power
GTA Semiconductor	Fab 5, Fab 6	China, Shanghai, Pudong New Area	5.1[332]	2020	150, 200, 300		115000
Shanghai Belling[333]		China, Shanghai			150	1200		BiCMOS, CMOS
SiSemi[334]		China, Shenzhen, Longgang High-tech Industrial Park[335]		2004	130			Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs
SiSemi[335]				1997	100			Transistors
CRMicro (formerly CSMC)[336]	Fab 1			1998[3]	150[337]		60,000[3]	HV Analog, MEMS, Power, Analog, Foundry
CRMicro (formerly CSMC)	Fab 2	China, Wuxi		2008[3]	200[337]	180, 130	40,000[3]	HV Analog, Foundry
CRMicro (formerly CSMC)	Fab 3			1995[3]	200[337]	130	20,000[3]
CRMicro (formerly CSMC)	Fab 5			2005[3]			30,000[3]
Nexchip[20]	N1[338]	China, Hefei		Q4 2017	300	150-40	40,000	Display Drivers IC[339]
Nexchip[20]	N2[338]	China, Hefei		Under construction	300		40,000
Nexchip[20]	N3[338]	China, Hefei		Under construction	300		40,000
Nexchip[20]	N4[338]	China, Hefei		Under construction	300		40,000
Wandai[20]	CQ	China, Chongqing		Under construction	300		20,000
San'an Optoelectronics[340]	Tianjin San'an Optoelectronics Co., Ltd.	China, Tianjin						LEDs
San'an Optoelectronics	Xiamen San'an Optoelectronics Technology Co., Ltd.	China, Xiamen						LEDs
San'an Optoelectronics	Xiamen San'an Optoelectronics Co., Ltd.	China, Xiamen						LEDs
San'an Optoelectronics	Wuhu Anrui Optoelectronics Co., Ltd.	China, Wuhu						LEDs
San'an Optoelectronics	Anrui San'an Optoelectronics Co., Ltd.	China, Wuhu						LEDs
San'an Optoelectronics	Luminus Summary	United States						LEDs
San'an Optoelectronics	Quanzhou San'an Semiconductor Technology Co., Ltd.	China, Nan'an						LEDs
Sanan IC[341]	Xiamen Fab[342]	China, Xiamen	0.00785	2014	150		30,000	SAW filters, Foundry, GaA, GaN, RF, Power
Sanan IC	Quanzhou Fab	China, Quanzhou	4.6	2017	150		8,000	SAW filters, Foundry, GaA, RF
Sanan IC	Changsha Fab	China, Changsha	2.3	2021	150		30,000	Foundry, GaN, SiC, Power
Hua Hong Semiconductor	HH Fab7	China, Wuxi			300	90-55	95,000[343]	Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor	HH Fab1	China, Shanghai, Jinqiao			200	95	65,000[344]	Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor	HH Fab2	China, Shanghai, Zhangjiang			200	180	60,000[344]	Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor	HH Fab3	China, Shanghai, Zhangjiang			200	90	53,000[344]	Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor (HLMC)	HH Fab5[345]	China, Shanghai, Zhangjiang		2011	300	65/55-40	35,000	Foundry
Hua Hong Semiconductor (HLMC)	HH Fab6	China, Shanghai, Kangqiao		2018	300	28/22	40,000	Foundry
HuaLei Optoelectronic		China						LEDs[346]
Sino King Technology[19]		China, Hefei		2017				DRAM
APT Electronics		China, Guangzhou[3]		2006[3]
Aqualite		China, Guangzhou[3]		2006[3]
Aqualite		China, Wuhan[3]		2008[3]
Xiamen Jaysun Semiconductor Manufacturing	Fab 101	China, Xiamen[3]	0.035	2011[3]
Xiyue Electronics Technology	Fab 1	China, Xian[3]	0.096	2007[3]
Hanking Electronics	Fab 1	China, Fushun		2018	200		10,000 – 30,000	MEMS Foundry Archived 2021-03-08 at the Wayback Machine, MEMS Design Archived 2021-03-08 at the Wayback Machine MEMS Sensors (Inertial, Pressure, Ultrasound, Piezoelectric, LiDar, Bolometer ) IoT Motion Sensors
CanSemi[347]	Phase I	China, Guangzhou	4	2019[348]	300	180–90[349]	20,000	Power, Analog, Power Discrete
CanSemi	Phase II	China, Guangzhou		2022	300	90-55	20,000
CanSemi	Phase III	China, Guangzhou	2.4[350]	Planned	300	55-40	40,000	Automotive, IoT
SensFab		Singapore[3]		1995[3]
MIMOS Semiconductor		Malaysia, Kuala Lumpur[3]	0.006, 0.135	1997, 2002[3]
Silterra Malaysia	Fab1	Malaysia, Kedah, Kulim	1.6	2000	200	250, 200, 180–90	46,000	CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Pyongyang Semiconductor Factory	111 Factory	North Korea, Pyongyang		1980s		3000[351]
DB HiTek	Fab 1	South Korea, Bucheon[3]		1997[3]				Foundry
DB HiTek	Fab 2	South Korea, Eumsung-Kun[3]		2001[3]				Foundry
DB HiTek	Fab 2 Module 2	South Korea, Eumsung-Kun[3]						Foundry
Kodenshi AUK Group[352]	Silicon FAB Line
Kodenshi AUK Group[352]	Compound FAB Line
Kyocera								SAW devices[145]
Seiko Instruments[353]		China, Shanghai
Seiko Instruments[353]		Japan, Akita
Seiko Instruments[353]		Japan, Takatsuka
Epson[354]	T wing	Japan, Sakata		1997	200	350-150	25,000
Epson[354]	S wing	Japan, Sakata		1991	150	1200-350	20,000
Olympus Corporation[355]	Nagano	Japan, Nagano Prefecture						MEMS[356]
Olympus		Japan						MEMS[357]
New Japan Radio	Kawagoe Works	Japan, Saitama Prefecture, Fujimino City[358][359]		1959[308]	100, 150	4000, 400, 350		Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV, SAW Filters[360]
New Japan Radio	Saga Electronics Archived 2017-09-19 at the Wayback Machine[361]	Japan, Saga Prefecture			100, 150	4000, 400, 350[362]		Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV, SAW Filters[360]
New Japan Radio	NJR FUKUOKA Archived 2017-09-18 at the Wayback Machine	Japan, Fukuoka Prefecture, Fukuoka City[361]		2003[363]	100, 150			Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs
New Japan Radio		Japan, Nagano, Nagano City[364]
New Japan Radio		Japan, Nagano, Ueda City[364]
Nichia	YOKOHAMA TECHNOLOGY CENTER[365]	Japan, Kanagawa						LEDs
Nichia	SUWA TECHNOLOGY CENTER[365]	Japan, Nagano						LEDs
Taiyo Yuden		Japan, Nagano						SAW devices[145]
Taiyo Yuden		Japan, Ome						SAW devices[145]
Silex Microsystems		Sweden, Stockholm County, Järfälla[3]	0.009, 0.032	2003, 2009[3]
Elmos Semiconductor		Germany, North Rhine-Westphalia, Dortmund[366]		1984	200	800, 350	9000	HV-CMOS
United Monolithic Semiconductors[367]		Germany, Baden-Württemberg, Ulm			100	700, 250, 150, 100		Foundry, FEOL, MMIC, GaAs pHEMT, InGaP, GaN HEMT, MESFET, Schottky diode
United Monolithic Semiconductors[367]		France, Île-de-France, Villebon-sur-Yvette			100			Foundry, BEOL
Innovative Ion Implant		France, Provence-Alpes-Côte d'Azur, Peynier			51–300[368]
Innovative Ion Implant		UK, Scotland, Bathgate			51–300[368]
nanoPHAB		Netherlands, North Brabant, Eindhoven			50–100	50-10	2–10	MEMS
Micron Semiconductor Ltd.[369]	Lancing	UK, England, West Sussex, Lancing						Detectors
Pragmatic Semiconductor	FlexLogic 001	UK, England, Durham	0.020	2018	200	600	4,000	Flexible Semiconductor / Foundry and IDM
Pragmatic Semiconductor	FlexLogic 002	UK, England, Durham	0.050	2023	300	600	15,000	Flexible Semiconductor / Foundry and IDM
Pragmatic Semiconductor	FlexLogic 003	UK, England, Durham	0.050	Planned 2025 on line	300	600	15,000	Flexible Semiconductor / Foundry and IDM
INEX Microtechnology		UK, England, Northumberland, Newcastle upon Tyne		2014	150			Foundry
CSTG		UK, Scotland, Glasgow[3][370]		2003[3]	76, 100			InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry
Photonix		UK, Scotland, Glasgow[3]	0.011	2000[3]
Integral		Belarus, Minsk		1963	100, 150, 200	2000, 1500, 350
VSP Mikron	WaferFab[371]	Russia, Voronezh Oblast, Voronezh		1959	100, 150	900+	6,000	Bipolar, Power Semiconductors
Semikron	Nbg Fab	Germany, Nuremberg		1984	150	3500	70,000	Bipolar, Power Semiconductors
NM-Tech		Russia, Moscow, Zelenograd		2016	200	250-110	20,000
Angstrem	Liniya 100	Russia, Moscow, Zelenograd		1963	100	1200	500 (6,000 per year)[372]
Angstrem	Liniya 150	Russia, Moscow, Zelenograd		1963	150	600	6,000 (72,000 per year)[372]
Mikron Group	Mikron	Russia, Moscow, Zelenograd	0.4[373]	2012	200 150 100	250-65 2000-1600	3,000 8,000 5,000
Crocus Nano Electronics		Russia, Moscow	0.2	2016	300	90-55	4,000[374]	BEOL
NIIIS		Russia, Nizhny Novgorod Oblast, Nizhny Novgorod		2010	100–150	350-150		MEMS
NPP Istok		Russia, Moscow Oblast, Fryazino			150
Micran		Russia, Tomsk Oblast, Tomsk		2015	100
Kremny El		Russia, Bryansk Oblast, Bryansk		2019		500
Syntez Microelectronics		Russia, Voronezh Oblast, Voronezh		1992	200	350-65		SiC, GaN, TSV
NZPP Vostok		Russia, Novosibirsk Oblast, Novosibirsk		1956	100	250-180
Russian Space Systems		Russia, Moscow			76, 100, 150	1000
Ruselectronics	Svetlana-Rost	Russia, Saint Petersburg			50, 76, 100	1000, 800, 500, 200
OKB-Planeta	Svetlana-Rost	Russia, Novgorod Oblast, Veliky Novgorod			100	150
FBK – Fondazione Bruno Kessler	MNF	Italy, Trento		1990	500	150		Research Institute; prototype productions of silicon MEMS, silicon radiation sensors
CEITEC – Centro Nacional de Tecnologia Electrônica Avançada S.A		Brazil, Porto Alegre		2008		600		Research Institute; prototype production
Honeywell Aerospace Technologies		USA, Redmond, Washington						MEMS

Number of open fabs currently listed here: 467

(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)

Closed plants

Company	Plant Name	Plant Location	Plant Cost (in US$ Billions)	Started Production	Wafer Size (mm)	Process Technology Node (nm)	Production Capacity (Wafers/Month)	Technology / Products	Ended Production
BelGaN Group (formerly ON Semiconductor) (formerly AMI Semiconductor) (formerly Alcatel Microelectronics) (formerly Mietec)[375]	Oudenaarde[376]	Belgium, East Flanders, Oudenaarde			150, 200	3000, 2000–350		GaN, mixed-signal CMOS, BCD foundry	2024
VEF		Soviet Union, Latvia, Riga		1960				Semi-secret government semiconductor fab and a major research center separated from the Russian military manufacturing complex by the collapse of the USSR.	1999
Tower Semiconductor (formerly Micron)	Fab 4[377]	Japan, Hyōgo, Nishiwaki	0.450[3]	1992[3]	200	95	60,000[3]	DRAM, foundry	2014
Tower Semiconductor – Tacoma		China, Jiangsu, Nanjing[378][379]		halted, bankruptcy in June 2020[380]	200, 300 (planned)			Foundry	2020
Fujian Jinhua (JHICC)[20][381][382][383]	F2	China, Fujian, Jinjiang	5.65[384]	2018 (planned)	300	22	60,000	DRAM[19]	2018
Decoma[20]	F2	China, Jiangsu, Huai'an		Under construction	300		20,000		2020
Wuhan Hongxin Semiconductor Manufacturing (HSMC)[385]		China, Hubei, Wuhan		2019 (halted)	300	14, 7	30,000[386]	Foundry	2020
Tsinghua Unigroup – Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.)[20]	SZ	China, Guangdong, Shenzhen	12.5	Planned	300		50,000	DRAM	2019 (just plan)
TSMC	Fab 1[221][136]	Taiwan Hsinchu, Baoshan		1987	150	2000-800	20,000	Foundry, CMOS, BiCMOS	2001, March 9
UMC	Fab 1	Japan, Chiba, Tateyama	0.543[3]	1997[3]	200		40,000	Foundry	2012
SK Hynix	E-4	United States, Oregon, Eugene	1.3	2007	200		30,000	DRAM	2008[387]
Symetrix – Panasonic[388]		Brazil	0.9 (planned)	planned				FeRAM	(just plan)
Rohm (formerly Data General)		United States, California, Sunnyvale[389]
Kioxia	Fab 1 (at Yokkaichi Operations)[390]	Japan, Mie, Yokkaichi		1992	200	400	35,000	SRAM, DRAM	2001, September
NEC	Livingston[391][87]	United Kingdom, Scotland, West Lothian, Livingston	4.5 (total)	1981	150, 200	800–350, 250, 180	30,000	CMOS, DRAM, SRAM, MCUs, ASICs, DSPs	2001, April
LFoundry [de] (formerly Renesas Electronics)[392]		Germany, Bavaria, Landshut		1992	200				2011
LFoundry [de] (formerly Atmel)[393]		France, Bouches-du-Rhône, Rousset		?	200		25.000[394]
Atmel (formerly Siemens)	Fab 9[395]	United Kingdom, Tyne and Wear, North Tyneside	1.53[396]	1998[397]				DRAM[397]	2007[398]
Microchip (formerly Atmel)[393]		United States, Colorado, Colorado Springs			150
EI Niš	Ei Poluprovodnici	Serbia, Nišava, Niš		1962	100				2000
Plessey Semiconductors (formerly Plus Semi) (formerly MHS Electronics) (formerly Zarlink) (formerly Mitel) (formerly Plessey Semiconductors)	[376]	UK, Devon, Plymouth[3]			100, 150	800, 500	8,000	Bipolar, ASICs, linear ICs
Telefunken Semiconductors [de]	Heilbronn, HNO-Line[376]	Germany, Baden-Württemberg, Heilbronn	0.125[3]	1993[3]	100, 150	800	10,000	Bipolar, CMOS, BiCMOS, GaAs, SiGe, ASICs, ASSPs, MCUs, discrete, optoelectronics	2015
Qimonda	Richmond[399]	United States, Virginia, Richmond	3	2005	300	65	38,000	DRAM	2009, January
STMicroelectronics (formerly Nortel[308])	[376]	United States, California, San Diego, Rancho Bernardo			100, 150	800, 500		NMOS, CMOS, BiCMOS	2002[400]
Freescale Semiconductor (formerly Motorola)	Toulouse Fab[401]	France, Haute-Garonne, Toulouse		1969	150	650		Automotive	2012[402]
Freescale Semiconductor (formerly Motorola) (formerly Tohoku Semiconductor)	Sendai Fab[403]	Japan, Miyagi, Sendai		1987	150, 200	500		DRAM, microcontrollers, analog, sensors	2009?
Agere Systems (formerly Lucent) (formerly AT&T)[404]		Spain, Madrid, Tres Cantos	0.67[405]	1987[406]		500, 350, 300		CMOS	2001
GMT Microelectronics (formerly Commodore Semiconductor) (formerly MOS Technology)		United States, Pennsylvania, Audubon		1969 1976 1995		1000			1976 1992[407] 2001
Integrated Device Technology		United States, California, Salinas		1985	150	800-350[408]			2002
ON Semiconductor (formerly Cherry Semiconductor)	[409]	United States, Rhode Island, East Greenwich			100, 150	1400	10,000	Bipolar, BiCMOS, Linear ICs and ASICs	2004
ON Semiconductor (formerly Motorola)	[409]	United States, Arizona, Phoenix			150	5000-500	12,000	MOS, power discrete	2011
ON Semiconductor (formerly Motorola)	Aizu Plant[409]	Japan, Aizu			100, 150	1200, 1000	40,000	CMOS, MCUs, logic and smart power ICs	2012
ON Semiconductor (formerly Truesense Imaging, Kodak)	Rochester	United States, New York, Rochester[410]			150			CCDs and Image Sensors	2020
Intel	Fab 8[61]	Israel, Jerusalem District, Jerusalem		1985	150			Microprocessors, Chipsets, Microcontrollers[62]	2007
Intel	Fab D2	United States, California, Santa Clara		1989	200	130	8,000	Microprocessors, Chipsets, Flash memory	2009
Intel	Fab 17[52][51]	United States, Massachusetts, Hudson		1998	200	130		Chipsets and other[51]	2014
Fairchild Semiconductor (formerly National Semiconductor)	West Jordan	United States, Utah, West Jordan		1977	150				2015[411]
Texas Instruments	HFAB	United States, Texas, Houston		1967	150				2013[412]
Texas Instruments (formerly Silicon Systems)	Santa Cruz	United States, California, Santa Cruz	0.250	1980	150	800	80,000	HDD	2001
Texas Instruments (formerly National Semiconductor)	Arlington	United States, Texas, Arlington		1985	150	80000, 35000			2010
Unknown (fortune 500 company)		United States, East Coast[413]			150		1,600	MEMS	2016
Diodes Incorporated (formerly Lite-On Power Semiconductor) (formerly AT&T)	KFAB	United States, Missouri, Lee's Summit		1994[414]	130				2017[415]
Qorvo (formerly TriQuint Semiconductor) (formerly Sawtek)		United States, Florida, Apopka[76][416]						SAW filters	2019
GlobalFoundries	Abu Dhabi[3]	UAE, Emirate of Abu Dhabi, Abu Dhabi[3]	6.8[3] (planned)	2016[3] (planned)	300	180-110	45,000	Foundry	2011 (plan stopped)
GlobalFoundries – Chengdu		China, Sichuan, Chengdu[417]	10 (planned)	2018 (planned), 2019 (second phase)	300	180/130 (cancelled), 22 (second phase)	20,000 (85,000 planned)	Foundry, FDSOI (second phase)	2020 (was idle)
Tondi Elektroonika[418]	A-1381	Soviet Union, Estonia, Harju, Tallinn		1958				Radio equipment, Transisors, Photodiode	1978
Intersil (formerly Harris Semiconductor, formerly GE, formerly RCA)	[409]	United States, Ohio, Findlay		1954	100, 125	2000, 1500, 1200	60,000	CMOS, bipolar, BiCMOS, Semiconductors, Optoelectronics, Integrated Circuits, Research[419]	2003[420]

Number of closed fabs currently listed here: 47

See also

• List of Intel manufacturing sites
• List of integrated circuit manufacturers
• Semiconductor device fabrication