Ke-sò͘ (珪素/硅素; hû-hō: Si; La-teng-gí Silicium; Eng-gí: silicon), ia̍h hō chò sia̍k (矽), mā thang kóng Si-lí-khóng, sī chi̍t khoán hoà-ha̍k goân-sò͘, goân-chú-hoan 14, sio̍k thòaⁿ-sò͘ cho̍k, sī 4-kè ê lūi-kim-sio̍k. Tī Tē-kiû ê tē-khak, silicium tē-jī chè ê goân-sò͘, it-poaⁿ ē chham sàng-sò͘ ha̍p-chò SiO2. Tī kang-gia̍p èng-iōng hong-bīn, silicium sī chè-chō pòaⁿ-tō-thé ê chú-iàu gôan-liāu.
Quick Facts Ki-pún sèng-chit, Miâ, hû-hō ...
Ke-sò͘, 14Si
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 Spectral lines of silicon |
| Ki-pún sèng-chit |
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| Miâ, hû-hō |
Ke-sò͘, Si |
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| Eng-bûn |
silicon |
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| Phian-miâ |
sia̍k, si-lí-khóng |
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| Gōa-hêng |
crystalline, reflective with bluish-tinged faces |
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| Ke-sò͘ tī chiu-kî-piáu lāi ê ūi-tì |
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| Goân-chú-hoan |
14 |
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| Goân-chú-liōng |
28.085[1] (28.084–28.086)[2] |
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| Goân-sò͘ lūi-pia̍t |
lūi-kim-sio̍k |
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| Cho̍k, hun-khu |
14 cho̍k, p khu |
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| Chiu-kî |
tē 3 chiu-kî |
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| Tiān-chú pâi-lia̍t |
[Ne] 3s2 3p2 |
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| per shell |
2, 8, 4 |
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| Bu̍t-lí sèng-chit |
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| Siòng |
kò͘-thé |
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| Iûⁿ-tiám |
1687 K (1414 °C, 2577 °F) |
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| Hut-tiám |
3538 K (3265 °C, 5909 °F) |
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| Bi̍t-tō͘ (sek-un) |
2.3290 g·cm−3 |
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|
2.57 g·cm−3 |
| Iûⁿ-hoà-jia̍t |
50.21 kJ·mol−1 |
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| Cheng-hoat-jia̍t |
383 kJ·mol−1 |
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| Jia̍t-iông-liōng |
19.789 J·mol−1·K−1 |
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cheng-khì-ap
| P (Pa) |
1 |
10 |
100 |
1 k |
10 k |
100 k |
| tī T (K) |
1908 |
2102 |
2339 |
2636 |
3021 |
3537 |
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| Goân-chú sèng-chit |
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| Sng-hòa-sò͘ |
4, 3, 2, 1[3] −1, −2, −3, −4 (an amphoteric oxide) |
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| Tiān-hū-tō͘ |
Pauling scale: 1.90 |
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| Tiān-lī-lêng |
1st: 786.5 kJ·mol−1
2nd: 1577.1 kJ·mol−1
3rd: 3231.6 kJ·mol−1
(more) |
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| Goân-chú pòaⁿ-kèng |
empirical: 111 pm |
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| Kiōng-kè pòaⁿ-kèng |
111 pm |
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| Van der Waals pòaⁿ-kèng |
210 pm |
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| Cha̍p-lio̍k |
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| Chiⁿ-thé kò͘-chō |
diamond cubic |
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| Siaⁿ-sok (sòe kùn-á) |
8433 m·s−1 (at 20 °C) |
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| Jia̍t-phòng-tiòng |
2.6 µm·m−1·K−1 (at 25 °C) |
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| Jia̍t-thoân-tō-lu̍t |
149 W·m−1·K−1 |
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| Tiān-chó͘-lu̍t |
2.3×103 Ω·m (at 20 °C)[4] |
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| Lêng-phāng |
1.12 eV (at 300 K) |
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| Chû-sèng |
diamagnetic[5] |
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| Young hē-sò͘ |
130–188 GPa[6] |
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| Shear hē-sò͘ |
51–80 GPa[6] |
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| Bulk hē-sò͘ |
97.6 GPa[6] |
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| Poisson pí |
0.064–0.28[6] |
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| Mohs ngē-tō͘ |
7 |
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| CAS teng-kì pian-hō |
7440-21-3 |
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| Le̍k-sú |
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| Hō-miâ |
after Latin 'silex' or 'silicis', meaning flint |
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| Chhui-chhek |
Antoine Lavoisier (1787) |
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| Hoat-hiān kap siōng chá ê tông-ūi-sò͘ |
Jöns Jacob Berzelius[7][8] (1823) |
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| hō-miâ |
Thomas Thomson (1817) |
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| Chòe ún-tēng ê tông-ūi-sò͘ |
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|
Chú bûn-chiong: Ke-sò͘ ê tông-ūi-sò͘ |
| iso |
NA |
half-life |
DM |
DE (MeV) |
DP |
| 28Si |
92.23% |
28Si is stable with 14 neutrons |
| 29Si |
4.67% |
29Si is stable with 15 neutrons |
| 30Si |
3.1% |
30Si is stable with 16 neutrons |
| 32Si |
trace |
153 y |
β− |
13.020 |
32P |
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